BYQ28F-200
Philips Semiconductors Product specification
Rectifier diodes BYQ28F, BYQ28EX series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Soft recovery characteristic V
• Reverse surge capability
a1
13
a2
• High thermal cycling performance I
k
• Isolated mounting tab
2
= 150 V/ 200 V
R
≤ 0.895 V
F
= 10 A
O(AV)
I
= 0.2 A
RRM
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28F series is supplied in the SOT186 package.
The BYQ28EX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
case
123
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28F / BYQ28EX -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
stg
T
j
1 Neglecting switching and reverse current losses
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Ths ≤ 148˚C - 150 200 V
Average rectified output current square wave - 10 A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 92 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 10 A
per diode Ths ≤ 92 ˚C
Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28F, BYQ28EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 5.7 K/W
heatsink without heatsink compound - - 6.7 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
I
rrm
V
fr
Forward voltage IF = 5 A; Tj = 150˚C - 0.80 0.895 V
IF = 5 A - 0.95 1.10 V
IF = 10 A - 1.10 1.25 V
Reverse current VR = V
VR = V
; Tj = 100 ˚C - 0.1 0.2 mA
RWM
RWM
-210µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 9 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 15 25 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Peak reverse recovery current IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs - 0.5 0.7 A
= 0.25 A - 10 20 ns
rec
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28F, BYQ28EX series
ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
100%
rrm
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I = 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
8
Vo = 0.748 V
Rs = 0.0293 Ohms
7
6
5
4
3
2
1
0
012345678
0.1
BYQ28
0.2
IF(AV) / A
rr2
Ths(max) / C
D = 1.0
0.5
t
D =
p
T
t
t
p
I
T
Fig.5. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
F(AV)
104.4
110.1
115.8
121.5
127.2
132.9
138.6
144.3
150
) per
a = 1.57
F(AV)
Ths(max) / C
.
F(AV)
115.8
121.5
127.2
132.9
138.6
144.3
150
) per
R
Voltage Pulse Source
Current
shunt
Fig.3. Circuit schematic for t
D.U.T.
to ’scope
rr2
PF / W
6
Vo = 0.748 V
Rs = 0.0293 Ohms
5
4
3
2
1
0
0123456
BYQ28
1.9
2.2
2.8
4
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(I
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
October 1998 3 Rev 1.300
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