Philips BYQ28EX-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYQ28F, BYQ28EX series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 150 V/ 200 V
• Fast switching
• Soft recovery characteristic V
F
≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 10 A
• Isolated mounting tab
I
RRM
= 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28F series is supplied in the SOT186 package.
The BYQ28EX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28F / BYQ28EX -150 -200
V
RRM
Peak repetitive reverse voltage - 150 200 V
V
RWM
Crest working reverse voltage - 150 200 V
V
R
Continuous reverse voltage Ths ≤ 148˚C - 150 200 V
I
O(AV)
Average rectified output current square wave - 10 A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 92 ˚C
I
FRM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 10 A
per diode Ths ≤ 92 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
I
RSM
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
k
a1
a2
13
2
123
case
123
case
1 Neglecting switching and reverse current losses
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28F, BYQ28EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.7 K/W
heatsink without heatsink compound - - 6.7 K/W
R
th j-a
Thermal resistance junction to in free air - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 5 A; Tj = 150˚C - 0.80 0.895 V
IF = 5 A - 0.95 1.10 V
IF = 10 A - 1.10 1.25 V
I
R
Reverse current VR = V
RWM
; Tj = 100 ˚C - 0.1 0.2 mA
VR = V
RWM
-210µA
Q
s
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 9 nC
t
rr1
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 15 25 ns
-dIF/dt = 100 A/µs
t
rr2
Reverse recovery time IF = 0.5 A to IR = 1 A; I
rec
= 0.25 A - 10 20 ns
I
rrm
Peak reverse recovery current IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs - 0.5 0.7 A
V
fr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28F, BYQ28EX series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Qs and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation PF = f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
Fig.6. Maximum forward dissipation PF = f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
012345678
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
BYQ28
IF(AV) / A
PF / W
Ths(max) / C
150
144.3
138.6
132.9
127.2
121.5
115.8
110.1
104.4
D =
t
p
t
p
T
T
t
I
Vo = 0.748 V
Rs = 0.0293 Ohms
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0123456
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BYQ28
IF(AV) / A
PF / W
Ths(max) / C
150
144.3
138.6
132.9
127.2
121.5
115.8
Vo = 0.748 V
Rs = 0.0293 Ohms
October 1998 3 Rev 1.300
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