Philips BYQ28E-200, BYQ28E-150, BYQ28ED-200, BYQ28ED-150 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
a1
13
• High thermal cycling performance I
• Low thermal resistance
k
2
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
a2
= 10 A
O(AV)
I
= 0.2 A
RRM
trr ≤ 25 ns
PINNING SOT78 (TO220AB) SOT404 SOT428
PIN DESCRIPTION
1 anode 1
2 cathode
1
3 anode 2
tab cathode
tab
123
tab
2
13
tab
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28E/ BYQ28EB/ BYQ28ED -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
j
T
stg
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
Peak repetitive reverse - 150 200 V
voltage
Working peak reverse - 150 200 V
voltage
Continuous reverse voltage - 150 200 V
Average rectified output square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current (both diodes
conducting)
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current per diode
Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied V
RRM(max)
Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current per diode
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current per diode
Operating junction - 150 ˚C
temperature
Storage temperature - 40 150 ˚C
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction per diode - - 4.5 K/W
to mounting base both diodes - - 3 K/W
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
rr
t
rr1
t
rr2
I
rrm
V
fr
Forward voltage IF = 5 A; Tj = 150˚C - 0.8 0.895 V
IF = 5 A - 0.95 1.1 V
IF = 10 A - 1.1 1.25 V
Reverse current VR = V
VR = V
RWM
; Tj = 100˚C - 0.1 0.2 mA
RWM
-210µA
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-49nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs1525ns
Reverse recovery time IF = 0.5 A to IR = 1 A; I
= 0.25 A - 10 20 ns
rec
Peak reverse recovery IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs - 0.5 0.7 A
current
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
R
I = 1A
R
Current
shunt
D.U.T.
to ’scope
rr2
trr2
rr2
I
rrm
dI
F
dt
t
rr
time
Q
s
, Qs and I
rr1
10%
rrm
100%
time
V
fr
V
F
Voltage Pulse Source
Fig.4. Circuit schematic for t
0.5A
IF
0A
I = 0.25A
rec
IR
I
F
I
R
Fig.1. Definition of t
I
F
V
F
time
Fig.2. Definition of V
fr
Fig.5. Definition of t
0.5
Tmb(max) / C
p
t
T
D = 1.0
D =
T
t
p
t
F(AV)
110
115
120
125
130
135
140
145
150
) per
a = 1.57
F(AV)
Tmb(max) / C
.
F(AV)
120
125
130
135
140
145
150
) per
PF / W
6
Vo = 0.748 V
Rs = 0.0293 Ohms
5
4
3
2
1
0
0123456
4
BYQ28
2.8
IF(AV) / A
2.2
1.9
Fig.6. Maximum forward dissipation PF = f(I
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
PF / W
8
Vo = 0.748 V
Rs = 0.0293 Ohms
7
6
5
4
3
2
1
0
012345678
0.1
BYQ28
0.2
I
IF(AV) / A
Fig.3. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
October 1998 3 Rev 1.300
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