Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 10 A
• Low thermal resistance
I
RRM
= 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT428
PIN DESCRIPTION
1 anode 1
2 cathode
1
3 anode 2
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28E/ BYQ28EB/ BYQ28ED -150 -200
V
RRM
Peak repetitive reverse - 150 200 V
voltage
V
RWM
Working peak reverse - 150 200 V
voltage
V
R
Continuous reverse voltage - 150 200 V
I
O(AV)
Average rectified output square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current (both diodes
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current per diode
I
RSM
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current per diode
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 40 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a1
a2
13
2
123
tab
13
tab
2
123
tab
October 1998 1 Rev 1.300