Philips BYQ28EB-150, BYQ28EB-100, BYQ28ED-100, BYQ28EB-200, BYQ28E-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.895 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 10 A
• Low thermal resistance
I
RRM
= 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 SOT428
PIN DESCRIPTION
1 anode 1
2 cathode
1
3 anode 2
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ28E/ BYQ28EB/ BYQ28ED -150 -200
V
RRM
Peak repetitive reverse - 150 200 V
voltage
V
RWM
Working peak reverse - 150 200 V
voltage
V
R
Continuous reverse voltage - 150 200 V
I
O(AV)
Average rectified output square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current (both diodes
conducting)
I
FRM
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 119 ˚C - 10 A
current per diode
I
FSM
Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current per diode
I
RSM
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current per diode
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 40 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a1
a2
13
2
123
tab
13
tab
2
123
tab
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction per diode - - 4.5 K/W
to mounting base both diodes - - 3 K/W
R
th j-a
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 5 A; Tj = 150˚C - 0.8 0.895 V
IF = 5 A - 0.95 1.1 V
IF = 10 A - 1.1 1.25 V
I
R
Reverse current VR = V
RWM
-210µA
VR = V
RWM
; Tj = 100˚C - 0.1 0.2 mA
Q
rr
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-49nC
t
rr1
Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs1525ns
t
rr2
Reverse recovery time IF = 0.5 A to IR = 1 A; I
rec
= 0.25 A - 10 20 ns
I
rrm
Peak reverse recovery IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs - 0.5 0.7 A
current
V
fr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Qs and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation PF = f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
Fig.4. Circuit schematic for t
rr2
Fig.5. Definition of t
rr2
Fig.6. Maximum forward dissipation PF = f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
time
time
V
F
V
fr
V
F
I
F
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
012345678
0
1
2
3
4
5
6
7
8
D = 1.0
0.5
0.2
0.1
BYQ28
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
115
110
D =
t
p
t
p
T
T
t
I
Vo = 0.748 V
Rs = 0.0293 Ohms
0123456
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BYQ28
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
Vo = 0.748 V
Rs = 0.0293 Ohms
October 1998 3 Rev 1.300
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