Philips BYM99 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D118

BYM99

Ultra fast low-loss
controlled avalanche rectifier

Product specification
Supersedes data of June 1994

1996 Feb 19

Philips Semiconductors Product specification

Ultra fast low-loss

BYM99

controlled avalanche rectifier

FEATURES

• Glass passivated

• Low leakage current

• Excellent stability

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed
construction.

• Guaranteed avalanche energy
absorption capability

ka

• Available in ammo-pack

2/3 page (Datasheet)

• Also available with preformed leads
for easy insertion.

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

V

R

I

F(AV)

repetitive peak reverse voltage − 600 V
continuous reverse voltage − 600 V
average forward current Ttp=50°C; lead length = 10 mm

see Fig. 2;
averaged over any 20 ms period;
see also Fig 6

=60°C; PCB mounting (see

T

amb

Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6

I

FRM

I

FSM

E

RSM

T

stg

T

j

repetitive peak forward current Ttp=50°C; see Fig. 4 − 15 A

=60°C; see Fig. 5 − 7A

T

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

storage temperature −65 +175 °C
junction temperature −65 +150 °C

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM104

− 1.8 A

− 0.8 A

− 40 A

prior to

− 10 mJ

1996 Feb 19 2

Philips Semiconductors Product specification

Ultra fast low-loss

BYM99

controlled avalanche rectifier

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

forward voltage IF= 3 A; Tj=T

I

= 3 A; see Fig. 7 −−3.60 V

F

reverse avalanche

IR= 0.1 mA 700 −−V

; see Fig. 7 −−1.95 V

j max

breakdown voltage
reverse current VR=V

RRMmax

;

−− 5µA

see Fig. 8
V

R=VRRMmax

; Tj= 150 °C;

−−75 µA

see Fig. 8

reverse recovery time when switched from IF= 0.5 A

−−15 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12

diode capacitance f = 1 MHz; VR= 0 V; see Fig. 9 − 135 − pF
maximum slope of reverse

recovery current

when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;

= 1 A to

F

−− 3A/µs

see Fig.11

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.10.
For more information please refer to the

“General Part of associated Handbook”

.

1996 Feb 19 3