Philips BYM63 Datasheet
DISCRETE SEMICONDUCTORS
M3D118
DATA SH EET
handbook, 2 columns
BYM63
Ripple blocking diode
Product specification
Supersedes data of December 1995
File under Discrete Semiconductors, SC01
1996 Jun 10
Philips Semiconductors Product specification
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
k a
Ripple blocking diode BYM63
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
• Available in ammo-pack.
• Also available with preformed leads
for easy insertion.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 300 V
continuous reverse voltage − 300 V
average forward current averaged over any 20 ms period;
− 2.4 A
Ttp= 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
averaged over any 20 ms period;
T
= 65 °C;
amb
− 1.0 A
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
I
FRM
I
FSM
T
T
stg
j
repetitive peak forward current Ttp= 55 °C − 21 A
T
= 65 °C − 8.5 A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj= T
VR= V
prior to surge;
j max
RRMmax
− 45 A
storage temperature −65 +175 °C
junction temperature −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
Ripple blocking diode BYM63
ELECTRICAL CHARACTERISTICS
Tj= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
t
fr
t
on
t
rr
C
d
forward voltage IF= 2 A; Tj= T
; see Fig.5 − − 1.34 V
j max
IF= 2 A; see Fig.5 − − 2.30 V
reverse current VR= V
RRMmax
;
− − 10 µA
see Fig.6
VR= V
RRMmax
; Tj= 165 °C;
− − 150 µA
see Fig.6
forward recovery time when switched to IF= 5 A
− − 1.5 µs
in 50 ns; see Fig.9
turn-on time when switched from VF= 0 V to
400 − − ns
VF= 3 V; measured between
10% and 90% of I
F max
;
see Fig.11
reverse recovery time when switched from IF= 0.5 A to
− − 150 ns
IR= 1 A; measured at
IR= 0.25 A; see Fig.11
diode capacitance f = 1 MHz; VR= 0 V; see Fig.7 − 65 − pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the
‘General Part of Handbook SC01.’
1996 Jun 10 3
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