Philips BYM56C, BYM56B, BYM56A-40, BYM56E-40, BYM56C-21 Datasheet
DATA SH EET
Product specification
Supersedes data of April 1992
1996 May 24
DISCRETE SEMICONDUCTORS
BYM56 series
Controlled avalanche rectifiers
handbook, 2 columns
M3D118
1996 May 24 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
V
RWM
crest working reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
V
R
continuous reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
I
F(AV)
average forward current Ttp=60°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
− 3.5 A
T
amb
=65°C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
− 1.4 A
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 80 A
1996 May 24 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
E
RSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 20
mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature
see Fig.5
−65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF=3A; Tj=T
j max;
see Fig.6 −−0.95 V
I
F
= 3 A; see Fig.6 −−1.15 V
V
(BR)R
reverse avalanche
breakdown voltage
IR= 0.1 mA
BYM56A 225 −−V
BYM56B 450 −−V
BYM56C 650 −−V
BYM56D 900 −−V
BYM56E 1100 −−V
I
R
reverse current VR=V
RRMmax
; see Fig.7 −−1µA
V
R=VRRMmax
; Tj= 165 °C;
see Fig.7
−−150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.10
− 3 −
µs
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 90 −
pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
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