Philips BYM56A, BYM56E, BYM56D Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D118
BYM56 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
absorption capability
2/3 page (Datasheet)
MAM104
• Available in ammo-pack
• Also available with preformed leads
Fig.1 Simplified outline (SOD64) and symbol.
for easy insertion.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
V
RWM
crest working reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
V
R
continuous reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
I
F(AV)
average forward current Ttp=60°C;
− 3.5 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
=65°C; PCB mounting
amb
− 1.4 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
VR=V
prior to surge;
j max
RRMmax
− 80 A
1996 May 24 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYM56 series
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
RSM
non-repetitive peak reverse avalanche
energy
T
stg
T
j
storage temperature −65 +175 °C
junction temperature
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
F
(BR)R
forward voltage IF=3A; Tj=T
I
= 3 A; see Fig.6 −−1.15 V
F
reverse avalanche
IR= 0.1 mA
breakdown voltage
BYM56A 225 −−V
BYM56B 450 −−V
BYM56C 650 −−V
BYM56D 900 −−V
BYM56E 1100 −−V
I
R
reverse current VR=V
V
R=VRRMmax
see Fig.7
t
rr
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.10
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 90 −
L = 120 mH; Tj=T
j max
prior to
− 20
surge; inductive load switched off
see Fig.5
see Fig.6 −−0.95 V
j max;
; see Fig.7 −−1µA
RRMmax
; Tj= 165 °C;
−−150 µA
−65 +175 °C
− 3 −
mJ
µs
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 May 24 3
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