Philips BYM36G, BYM36F, BYM36E, BYM36D, BYM36C Datasheet

DISCRETE SEMICONDUCTORS

handbook, 2 columns

M3D118

BYM36 series

Fast soft-recovery

controlled avalanche rectifiers

Product specification

1996 Sep 18

Supersedes data of 1996 May 30

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙Available in ammo-pack

∙Also available with preformed leads for easy insertion.

	DESCRIPTION	This package is hermetically sealed
	Rugged glass SOD64 package, using	and fatigue free as coefficients of
		expansion of all used parts are
	a high temperature alloyed
		matched.
	construction.
	k
		MAM104

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	BYM36A		−	200	V
	BYM36B		−	400	V
	BYM36C		−	600	V
	BYM36D		−	800	V
	BYM36E		−	1000	V
	BYM36F		−	1200	V
	BYM36G		−	1400	V
VR	continuous reverse voltage
	BYM36A		−	200	V
	BYM36B		−	400	V
	BYM36C		−	600	V
	BYM36D		−	800	V
	BYM36E		−	1000	V
	BYM36F		−	1200	V
	BYM36G		−	1400	V
IF(AV)	average forward current	Ttp = 55 °C; lead length = 10 mm;
	BYM36A to C	see Figs 2; 3 and 4	−	3.0	A
	BYM36D and E	averaged over any 20 ms period;	−	2.9	A
		see also Figs 14; 15 and 16
	BYM36F and G		−	2.9	A
IF(AV)	average forward current	Tamb = 65 °C; PCB mounting (see
	BYM36A to C	Fig.25); see Figs 5; 6 and 7	−	1.25	A
	BYM36D and E	averaged over any 20 ms period;	−	1.20	A
		see also Figs 14; 15 and 16
	BYM36F and G		−	1.15	A

1996 Sep 18

2

Philips Semiconductors	Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
IFRM	repetitive peak forward current	Ttp = 55 °C; see Figs 8; 9 and 10
	BYM36A to C		−	37	A
	BYM36D and E		−	33	A
	BYM36F and G		−	27	A
IFRM	repetitive peak forward current	Tamb = 65 °C; see Figs 11; 12 and 13
	BYM36A to C		−	13	A
	BYM36D and E		−	11	A
	BYM36F and G		−	10	A
IFSM	non-repetitive peak forward current	t = 10 ms half sine wave; Tj = Tj max	−	65	A
		prior to surge; VR = VRRMmax
ERSM	non-repetitive peak reverse	L = 120 mH; Tj = Tj max prior to surge;	−	10	mJ
	avalanche energy	inductive load switched off
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature	see Figs 17 and 18	−65	+175	°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VF	forward voltage	IF = 3 A; Tj = Tj max;
	BYM36A to C	see Figs 19; 20 and 21	−	−	1.22	V
	BYM36D and E		−	−	1.28	V
	BYM36F and G		−	−	1.24	V
VF	forward voltage	IF = 3 A;
	BYM36A to C	see Figs 19; 20 and 21	−	−	1.60	V
	BYM36D and E		−	−	1.78	V
	BYM36F and G		−	−	1.57	V
V(BR)R	reverse avalanche breakdown	IR = 0.1 mA
	voltage
	BYM36A		300	−	−	V
	BYM36B		500	−	−	V
	BYM36C		700	−	−	V
	BYM36D		900	−	−	V
	BYM36E		1100	−	−	V
	BYM36F		1300	−	−	V
	BYM36G		1500	−	−	V
IR	reverse current	VR = VRRMmax; see Fig.22	−	−	5	μA
		VR = VRRMmax;	−	−	150	μA
		Tj = 165 °C; see Fig.22

1996 Sep 18

3

Philips Semiconductors	Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

SYMBOL				PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
trr				reverse recovery time	when switched from
				BYM36A to C	IF = 0.5 A to IR = 1 A;	-	-	100	ns
				BYM36D and E	measured at IR = 0.25 A;	-	-	150	ns
					see Fig. 26
				BYM36F and G		-	-	250	ns
Cd				diode capacitance	f = 1 MHz; VR = 0 V;
				BYM36A to C	see Figs 23 and 24	-	85	-	pF
				BYM36D and E		-	75	-	pF
				BYM36F and G		-	65	-	pF
	dIR			maximum slope of reverse recovery	when switched from
	--------			current	IF = 1 A to VR ³ 30 V and
	dt				dIF/dt = -1 A/ms;	-	-		A/ms
				BYM36A to C				7
					see Fig.27
				BYM36D and E		-	-	6	A/ms
				BYM36F and G		-	-	5	A/ms

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-tp	thermal resistance from junction to tie-point	lead length = 10 mm	25	K/W
Rth j-a	thermal resistance from junction to ambient	note 1	75	K/W

Note

1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.25. For more information please refer to the ‘General Part of Handbook SC01’.

1996 Sep 18

4

Philips Semiconductors	Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

GRAPHICAL DATA

MSA884

3 handbook, halfpage

IF(AV)

(A)2015 10 lead length (mm)

2

1

0

0	100	Ttp (	o	C)	200

BYM36A to C

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MSA885

3
handbook, halfpage
I F(AV)
(A)	20 15 10 lead length (mm)
2

1

0
				o
0		100	Ttp (		C)	200
BYM36D and E
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.3		Maximum average forward current as a

function of tie-point temperature (including losses due to reverse leakage).

MBD418

4.0 handbook, halfpage

I F(AV)

(A)

3.2

lead length 10 mm

2.4

1.6

0.8

0

0	100	T (oC)	200
		tp

BYM36F and G

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.4 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MLB492

2.0

IF(AV)

(A)

1.6

1.2

0.8

0.4

0

0

100

Tamb (oC) 200

BYM36A to C

a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.25.

Switched mode application.

Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).

1996 Sep 18

5