Philips BYM36E-40, BYM36C-41, BYM36C-40, BYM36C-20 Datasheet

DATA SH EET

Product specification
Supersedes data of 1996 May 30

1996 Sep 18

DISCRETE SEMICONDUCTORS

BYM36 series

Fast soft-recovery
controlled avalanche rectifiers

handbook, 2 columns

M3D118

1996 Sep 18 2

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYM36 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack

• Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed
construction.

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

Fig.1 Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYM36A − 200 V
BYM36B − 400 V
BYM36C − 600 V
BYM36D − 800 V
BYM36E − 1000 V
BYM36F − 1200 V
BYM36G − 1400 V

V

R

continuous reverse voltage

BYM36A − 200 V
BYM36B − 400 V
BYM36C − 600 V
BYM36D − 800 V
BYM36E − 1000 V
BYM36F − 1200 V
BYM36G − 1400 V

I

F(AV)

average forward current Ttp=55°C; lead length = 10 mm;

see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16

BYM36A to C − 3.0 A
BYM36D and E − 2.9 A
BYM36F and G − 2.9 A

I

F(AV)

average forward current T

amb

=65°C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16

BYM36A to C − 1.25 A
BYM36D and E − 1.20 A
BYM36F and G − 1.15 A

1996 Sep 18 3

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYM36 series

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

I

FRM

repetitive peak forward current Ttp=55°C; see Figs 8; 9 and 10

BYM36A to C − 37 A
BYM36D and E − 33 A
BYM36F and G − 27 A

I

FRM

repetitive peak forward current T

amb

=65°C; see Figs 11;12and13

BYM36A to C − 13 A
BYM36D and E − 11 A
BYM36F and G − 10 A

I

FSM

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

j max

prior to surge; VR=V

RRMmax

− 65 A

E

RSM

non-repetitive peak reverse
avalanche energy

L = 120 mH; Tj=T

j max

prior to surge;

inductive load switched off

− 10 mJ

T

stg

storage temperature −65 +175 °C

T

j

junction temperature see Figs 17 and 18 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 3 A; Tj=T

j max

;

see Figs 19; 20 and 21

BYM36A to C −−1.22 V
BYM36D and E −−1.28 V
BYM36F and G −−1.24 V

V

F

forward voltage IF=3A;

see Figs 19; 20 and 21

BYM36A to C −−1.60 V
BYM36D and E −−1.78 V
BYM36F and G −−1.57 V

V

(BR)R

reverse avalanche breakdown
voltage

IR= 0.1 mA

BYM36A 300 −−V
BYM36B 500 −−V
BYM36C 700 −−V
BYM36D 900 −−V
BYM36E 1100 −−V
BYM36F 1300 −−V
BYM36G 1500 −−V

I

R

reverse current VR=V

RRMmax

; see Fig.22 −− 5µA

V

R=VRRMmax

;

Tj= 165 °C; see Fig.22

−−150 µA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1996 Sep 18 4

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYM36 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the

“General Part of associated Handbook”

.

t

rr

reverse recovery time when switched from

IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 26

BYM36A to C −−100 ns
BYM36D and E −−150 ns
BYM36F and G −−250 ns

C

d

diode capacitance f = 1 MHz; VR=0V;

see Figs 23 and 24

BYM36A to C − 85 − pF
BYM36D and E − 75 − pF
BYM36F and G − 65 − pF

maximum slope of reverse recovery
current

when switched from
I

F

= 1 A to VR≥ 30 V and
dIF/dt = −1A/µs;
see Fig.27

BYM36A to C −− 7A/µs
BYM36D and E −− 6A/µs
BYM36F and G −− 5A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W

R

th j-a

thermal resistance from junction to ambient note 1 75 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dI

R

dt

--------

1996 Sep 18 5

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

BYM36 series

GRAPHICAL DATA

BYM36A toC

a =1.42; VR=V

RRMmax

; δ= 0.5.

Switched mode application.

Fig.2 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

handbook, halfpage

0 200

0

MSA884

100

T ( C)

o

I

F(AV)

(A)

3

1

2

lead length (mm)20 15 10

tp

BYM36D andE

a =1.42; VR=V

RRMmax

; δ= 0.5.

Switched mode application.

Fig.3 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

handbook, halfpage

0 200

0

MSA885

100

I

F(AV)

(A)

3

1

2

lead length (mm)20 15 10

T ( C)

o

tp

BYM36F andG

a =1.42; VR=V

RRMmax

; δ= 0.5.

Switched mode application.

Fig.4 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

handbook, halfpage

0 200

4.0

0

0.8

3.2

MBD418

100

I

F(AV)

(A)

T ( C)

o

tp

1.6

2.4

lead length 10 mm

BYM36A toC

a =1.42; VR=V

RRMmax

; δ= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.

Fig.5 Maximum average forward current as a

function of ambient temperature (including
losses due to reverse leakage).

0 200

2.0

0

0.4

1.6

MLB492

100

I

F(AV)

(A)

T ( C)

o

amb

0.8

1.2