Philips BYM36G, BYM36F, BYM36E, BYM36D, BYM36C Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, 2 columns

M3D118

BYM36 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 May 30
File under Discrete Semiconductors, SC01

1996 Sep 18

Philips Semiconductors Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Rugged glass SOD64 package, using
a high temperature alloyed
construction.

• Low leakage current

• Excellent stability

ka

• Guaranteed avalanche energy

2/3 page (Datasheet)

absorption capability

• Available in ammo-pack

• Also available with preformed leads

Fig.1 Simplified outline (SOD64) and symbol.

for easy insertion.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYM36A − 200 V
BYM36B − 400 V
BYM36C − 600 V
BYM36D − 800 V
BYM36E − 1000 V
BYM36F − 1200 V
BYM36G − 1400 V

V

R

continuous reverse voltage

BYM36A − 200 V
BYM36B − 400 V
BYM36C − 600 V
BYM36D − 800 V
BYM36E − 1000 V
BYM36F − 1200 V
BYM36G − 1400 V

I

F(AV)

average forward current Ttp=55°C; lead length = 10 mm;

BYM36A to C − 3.0 A
BYM36D and E − 2.9 A

see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16

BYM36F and G − 2.9 A

I

F(AV)

average forward current T

BYM36A to C − 1.25 A
BYM36D and E − 1.20 A

=65°C; PCB mounting (see

amb

Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16

BYM36F and G − 1.15 A

This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.

MAM104

1996 Sep 18 2

Philips Semiconductors Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

FRM

I

FRM

I

FSM

E

RSM

T

stg

T

j

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

repetitive peak forward current Ttp=55°C; see Figs 8; 9 and 10

BYM36A to C − 37 A
BYM36D and E − 33 A
BYM36F and G − 27 A

repetitive peak forward current T

=65°C; see Figs 11;12and13

amb

BYM36A to C − 13 A
BYM36D and E − 11 A
BYM36F and G − 10 A

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

non-repetitive peak reverse
avalanche energy

prior to surge; VR=V
L = 120 mH; Tj=T

inductive load switched off

RRMmax

prior to surge;

j max

j max

− 65 A

− 10 mJ

storage temperature −65 +175 °C
junction temperature see Figs 17 and 18 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 3 A; Tj=T

BYM36A to C −−1.22 V

see Figs 19; 20 and 21

j max

;

BYM36D and E −−1.28 V
BYM36F and G −−1.24 V

V

F

forward voltage IF=3A;

BYM36A to C −−1.60 V

see Figs 19; 20 and 21

BYM36D and E −−1.78 V
BYM36F and G −−1.57 V

V

(BR)R

reverse avalanche breakdown

IR= 0.1 mA

voltage

BYM36A 300 −−V
BYM36B 500 −−V
BYM36C 700 −−V
BYM36D 900 −−V
BYM36E 1100 −−V
BYM36F 1300 −−V
BYM36G 1500 −−V

I

R

reverse current VR=V

V

R=VRRMmax

; see Fig.22 −− 5µA

RRMmax

;

−−150 µA

Tj= 165 °C; see Fig.22

1996 Sep 18 3

Philips Semiconductors Product specification

Fast soft-recovery

BYM36 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

rr

C

d

dI

R

-------­dt

THERMAL CHARACTERISTICS

reverse recovery time when switched from

BYM36A to C −−100 ns
BYM36D and E −−150 ns
BYM36F and G −−250 ns

diode capacitance f = 1 MHz; VR=0V;

BYM36A to C − 85 − pF
BYM36D and E − 75 − pF
BYM36F and G − 65 − pF

maximum slope of reverse recovery
current

BYM36A to C −− 7A/µs
BYM36D and E −− 6A/µs
BYM36F and G −− 5A/µs

IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 26

see Figs 23 and 24

when switched from
IF= 1 A to VR≥ 30 V and
dIF/dt = −1A/µs;
see Fig.27

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the

thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W

‘General Part of Handbook SC01’

.

1996 Sep 18 4

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

3

I

F(AV)

(A)

2

1

0

0 200

BYM36A toC

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

lead length (mm)20 15 10

100

o

T ( C)

tp

MSA884

handbook, halfpage

3

I

F(AV)

(A)

2

1

0

0 200

BYM36D andE

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

BYM36 series

lead length (mm)20 15 10

100

o

T ( C)

tp

MSA885

Fig.2 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

4.0

handbook, halfpage

I

F(AV)

(A)

3.2

2.4

1.6

0.8

0

0 200

BYM36F andG

a =1.42; VR=V
Switched mode application.

RRMmax

lead length 10 mm

100

; δ= 0.5.

o

T ( C)

tp

MBD418

Fig.3 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

amb

MLB492

o

2.0

I

F(AV)

(A)

1.6

1.2

0.8

0.4

0

0 200

BYM36A toC

a =1.42; VR=V
Device mounted as shown in Fig.25.
Switched mode application.

RRMmax

; δ= 0.5.

100

T ( C)

Fig.4 Maximum average forward current as a

function of tie-point temperature (including
losses due to reverse leakage).

1996 Sep 18 5

Fig.5 Maximum average forward current as a

function of ambient temperature (including
losses due to reverse leakage).