Philips BYM359X-1500 Datasheet
Philips Semiconductors Product specification
Dual diode BYM359X
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop DAMPER MODULATOR
• Fast switching
• Soft recovery characteristic VR=1500 V VR=800 V
• High thermal cycling
performance VF ≤ 1.3 V VF ≤ 1.45 V
• Isolated mounting tab
I
F(RMS)
=15.7 A I
F(RMS)
= 11 A
I
FSM
≤ 60 A I
FSM
≤ 60 A
trr ≤ 300 ns trr ≤ 145 ns
GENERAL DESCRIPTION PINNING SOT186A
Combined damper and modulator PIN DESCRIPTION
diodes in an isolated plastic
envelopeforhorizontaldeflectionin 1 damper cathode
colour TV and PC monitors.
The BYM359X contains diodes 2 common anode/cathode
with performance characteristics
designed specifically for 3 modulator anode.
applications from 16kHz to 56kHz
The BYM359X series is suppliedin
the conventional leaded SOT186A
package.
LIMITING VALUES
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX UNIT
V
RSM
Peak non-repetitive reverse - 1500 - 800 V
voltage.
V
RRM
Peak repetitive reverse voltage - 1500 - 600 V
V
RWM
Crest working reverse voltage - 1300 - 600 V
I
F(AV)
Average forward current sinusoidal;a=1.57 - 10 - 8 A
I
F(RMS)
RMS forward current - 15.7 - 11.0 A
I
FRM
Peak repetitive forward current t=25 µs δ= 0.5 - 20 - 16.0 A
Ths ≤ 83 ˚C
I
FSM
Peak non-repetitive forward t = 10ms - 60 - 60 A
current t = 8.3 ms - 66 - 66 A
sinusoidal;
with reapplied
V
RWM(MAX)
T
stg
Storage temperature -40 150 -40 150 ˚C
T
J
Operating junction temperature - 150 - 150 ˚C
1
3
2
damper modulator
123
case
December 1999 1 Rev 1.200
Philips Semiconductors Product specification
Dual diode BYM359X
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink - 4.8 - 4.8 K/W
heatsink compound
R
th j-a
Thermal resistance junction to in free air. 55 - - 55 K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
V
F
Forward voltage IF = 6.5 A 1.1 1.45 1.15 1.55 V
IF = 6.5 A; Tj = 125˚C 1.05 1.3 1.1 1.45 V
I
R
Reverse current VR = V
RWM
10 250 10 100 µA
VR = V
RWM
50 500 100 600 µA
Tj = 100 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
t
rr
Reverse recovery time IF = 1 A; VR ≥ 30 V; 200 300 125 145 ns
-dIF/dt = 50 A/µs
Q
s
Reverse recovery charge 2 A,30 V,20 A/µs 1.2 2.0 0.5 0.7 µC
V
fr
Peak forward recovery voltage IF = 6.5 A; 27 - 18.0 - V
dIF/dt = 50 A/µs
December 1999 2 Rev 1.200
Philips Semiconductors Product specification
Dual diode BYM359X
fast, high-voltage
Fig.1. Definition of trr, Qs and I
rrm
Fig.2. Definition of V
fr
Fig.3. Modulator maximum forward dissipation,
PF = f(I
F(AV)
); square wave current waveform;
parameter D = duty cycle = tp/T.
Fig.4. Modulator maximum forward dissipation,
PF = f(I
F(AV)
); sinusoidal current waveform; parameter
a = form factor = I
F(RMS)/IF(AV)
.
Fig.5. Modulator maximum non-repetitive rms forward
current. IF = f(tp); sinusoidal current waveform;
Tj = 150˚C prior to surge with reapplied V
RWM
.
Fig.6. Modulator typical and maximum forward
characteristic; IF = f(VF); parameter T
j
0 2 4 6 8
BY329
IF(AV) / A
PF / W
15
10
5
0
4
2.8
2.2
1.9
a = 1.57
Ths(max) / C
150
78
102
126
Vo = 1.25 V
Rs = 0.03 Ohms
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
1ms 10ms 0.1s 1s 10s
tp / s
IFS(RMS) / A
BY229
80
70
60
50
40
30
20
10
0
IFSM
time
time
V
F
V
fr
V
F
I
F
0 1
BY229F
VF / V
IF / A
30
20
10
0
2
0.5
1.5
max
typ
Tj = 150 C
Tj = 25 C
0 2 4 6 8 10 12
BY329
IF(AV) / A
PF / W
20
15
10
5
0
Ths(max) / C
150
54
78
102
126
0.5
0.2
0.1
D = 1.0
D =
t
p
t
p
T
T
I
t
Vo = 1.25 V
Rs = 0.03 Ohms
December 1999 3 Rev 1.200
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