Philips BYM359DX Datasheet
Philips Semiconductors Product specification
Dual diode BYM359DX
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop DAMPER MODULATOR
• Fast switching
• Soft recovery characteristic VR=1500 V VR=800 V
• High thermal cycling
performance VF ≤ 1.3 V VF ≤ 1.45 V
1
• Isolated mounting tab
GENERAL DESCRIPTION PINNING SOT399
dampermodulator
3
I
=15.7 A I
2
F(RMS)
I
≤ 60 A I
FSM
F(RMS)
≤ 60 A
FSM
= 11 A
trr ≤ 300 ns trr ≤ 145 ns
Combined damper and modulator PIN DESCRIPTION
case
diodes in an isolated plastic
envelopeforhorizontaldeflectionin 1 modulator anode.
colour TV and PC monitors.
The BYM359DX contains diodes 2 common anode/cathode
with performance characteristics
designed specifically for 3 damper cathode
applications from 16kHz to 56kHz
The BYM359DX series is supplied
123
inthe conventionalleadedSOT399
package.
LIMITING VALUES
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX UNIT
V
RSM
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
Peak non-repetitive reverse - 1500 - 800 V
voltage.
Peak repetitive reverse voltage - 1500 - 600 V
Crest working reverse voltage - 1300 - 600 V
Average forward current sinusoidal;a=1.57 - 10 - 8 A
RMS forward current - 15.7 - 11.0 A
Peak repetitive forward current t=25 µs δ= 0.5 - 20 - 16.0 A
Ths ≤ 83 ˚C
Peak non-repetitive forward t = 10ms - 60 - 60 A
current t = 8.3 ms - 66 - 66 A
sinusoidal;
with reapplied
V
RWM(MAX)
T
stg
T
J
Storage temperature -40 150 -40 150 ˚C
Operating junction temperature - 150 - 150 ˚C
March 2000 1 Rev 1.000
Philips Semiconductors Product specification
Dual diode BYM359DX
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
R
th j-hs
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
DAMPER MODULATOR
Thermal resistance junction to with heatsink - 3.5 - 3.5 K/W
heatsink compound
R
th j-a
Thermal resistance junction to in free air. 35 - - 35 K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
V
F
Forward voltage IF = 6.5 A 1.1 1.45 1.15 1.55 V
IF = 6.5 A; Tj = 125˚C 1.05 1.3 1.1 1.45 V
I
R
Reverse current VR = V
VR = V
RWM
RWM
10 250 10 100 µA
50 500 100 600 µA
Tj = 100 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
t
rr
Q
s
V
fr
Reverse recovery time IF = 1 A; VR ≥ 30 V; 200 300 125 145 ns
-dIF/dt = 50 A/µs
Reverse recovery charge 2 A,30 V,20 A/µs 1.2 2.0 0.5 0.7 µC
Peak forward recovery voltage IF = 6.5 A; 27 - 18.0 - V
dIF/dt = 50 A/µs
March 2000 2 Rev 1.000
Philips Semiconductors Product specification
Dual diode BYM359DX
fast, high-voltage
I
F
dI
F
dt
trr
15
10
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
time
5
Qs
I
R
I
rrm
Fig.1. Definition of trr, Qs and I
25%
rrm
100%
0
0 2 4 6 8
Fig.4. Modulator maximum forward dissipation,
PF = f(I
); sinusoidal current waveform; parameter
F(AV)
BY329
2.8
4
IF(AV) / A
a = form factor = I
I
F
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
Fig.5. Modulator maximum non-repetitive rms forward
IFS(RMS) / A
80
70
60
50
40
30
20
10
0
1ms 10ms 0.1s 1s 10s
IFSM
tp / s
current. IF = f(tp); sinusoidal current waveform;
Tj = 150˚C prior to surge with reapplied V
Ths(max) / C
1.9
2.2
F(RMS)/IF(AV)
a = 1.57
.
BY229
78
102
126
150
RWM
.
I
0.5
Ths(max) / C
t
p
T
D = 1.0
D =
54
78
102
t
p
T
126
t
150
PF / W
20
Vo = 1.25 V
Rs = 0.03 Ohms
15
10
5
0
0 2 4 6 8 10 12
0.1
BY329
0.2
IF(AV) / A
Fig.3. Modulator maximum forward dissipation,
PF = f(I
); square wave current waveform;
F(AV)
IF / A
30
Tj = 150 C
Tj = 25 C
20
10
typ
0
0 1
0.5
VF / V
Fig.6. Modulator typical and maximum forward
characteristic; IF = f(VF); parameter T
1.5
BY229F
max
2
j
parameter D = duty cycle = tp/T.
March 2000 3 Rev 1.000
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