Philips BYM357X Datasheet

Philips Semiconductors Product specification
Damper-Modulator BYM357X fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop DAMPER MODULATOR
• Fast switching
• Soft recovery characteristic VR=1500 V VR=600 V
• High thermal cycling performance VF 1.3 V VF 1.03 V
• Isolated mounting tab
GENERAL DESCRIPTION PINNING SOT186A
damper modulator
1
2
3
I
=7 A I
F(peak)
I
60 A I
FSM
F(peak)
FSM
= 7 A
70 A
trr 300 ns trr 60 ns
Combined damper and modulator PIN DESCRIPTION diodes in an isolated plastic
case
envelopeforhorizontaldeflectionin 1 damper cathode colour TV and PC monitors. The BYM357X contains diodes 2 common anode/cathode with performance characteristics designed specifically for 3 modulator anode. applications from 16kHz to 70kHz
The BYM357X series is suppliedin
123
the conventional leaded SOT186A package.
LIMITING VALUES
Tj = 25 ˚C unless otherwise stated
DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX UNIT
V
RSM
V
RRM
V
RWM
I
F(peak)
I
F(RMS)
Peak non-repetitive reverse - 1500 - 600 V voltage. Peak repetitive reverse voltage - 1500 - 600 V
Crest working reverse voltage - 1300 - 600 V Peak forward current 31-70 kHz monitor. - 7 - 7 A RMS forward current sinusoidal;a=1.57 - 15.7 - 14.1 A
I
FSM
Peak non-repetitive forward t = 10 ms - 60 - 70 A current t = 8.3 ms - 66 - 77 A
sinusoidal;with reapplied V
RWM(MAX)
T
stg
T
J
Storage temperature -40 150 -40 150 ˚C Operating junction temperature - 150 - 150 ˚C
February 2000 1 Rev 1.100
Philips Semiconductors Product specification
Damper-Modulator BYM357X fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
R
th j-hs
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V three terminals to external waveform; heatsink R.H. 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink
DAMPER MODULATOR
Thermal resistance junction to with heatsink - 4.8 - 5.5 K/W heatsink compound
R
th j-a
Thermal resistance junction to in free air. 55 - 55 - K/W ambient
STATIC CHARACTERISTICS OF DAMPER
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP MAX. UNIT
V
F
Forward voltage IF = 6.5 A 1.1 1.45 V
IF = 6.5 A; Tj = 125˚C 1.05 1.3 V
I
R
Reverse current VR = V
VR = V
RWM RWM
10 250 µA 50 500 µA
Tj = 100 ˚C
STATIC CHARACTERISTICS OF MODULATOR
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP MAX. UNIT
V
F
I
R
Forward voltage IF = 8 A 1.05 1.25 V
IF = 8 A; Tj = 125˚C 0.9 1.03 V IF = 20 A 1.3 1.45 V
Reverse current. VR = V
VR = V Tj = 100 ˚C
RWM RWM
10 50 µA
100 350 µA
February 2000 2 Rev 1.100
Philips Semiconductors Product specification
Damper-Modulator BYM357X fast, high-voltage
ELECTRICAL CHARACTERISTICS OF DAMPER
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
t
rr
Q
s
V
fr
ELECTRICAL CHARACTERISTICS OF MODULATOR
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
t
rr
I
rrm
Q
s
V
fr
Reverse recovery time IF = 1 A; VR 30 V; 200 300 ns
-dIF/dt = 50 A/µs Reverse recovery charge 2 A,30 V,20 A/µs 1.2 2.0 µC Peak forward recovery voltage IF = 6.5 A; 27 - V
dIF/dt = 50 A/µs
Reverse recovery time IF = 1 A; VR 30 V; 35 60 ns
/dt = 100 A/µs
-dI
F
Peak reverse recovery current IF = 10 A to VR 30 V; 3.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C Reverse recovery charge 2 A,30 V,20 A/µs4070nC Peak forward recovery voltage IF = 10 A; 3.2 - V
dIF/dt = 10 A/µs
February 2000 3 Rev 1.100
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