Philips BYM26D, BYM26C, BYM26B, BYM26A, BYM26G Datasheet
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DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D118
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors Product specification
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
temperature
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM26A − 200 V
BYM26B − 400 V
BYM26C − 600 V
BYM26D − 800 V
BYM26E − 1000 V
BYM26F − 1200 V
BYM26G − 1400 V
V
R
continuous reverse voltage
BYM26A − 200 V
BYM26B − 400 V
BYM26C − 600 V
BYM26D − 800 V
BYM26E − 1000 V
BYM26F − 1200 V
BYM26G − 1400 V
I
F(AV)
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
BYM26A to E − 2.30 A
BYM26F and G − 2.40 A
average forward current T
BYM26A to E − 1.05 A
BYM26F and G − 1.00 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=65°C; PCB mounting (see
amb
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
MAM104
1996 May 24 2
Philips Semiconductors Product specification
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYM26A to E − 19 A
BYM26F and G − 21 A
repetitive peak forward current T
=65°C; see Figs 8 and 9
amb
BYM26A to E − 8.0 A
BYM26F and G − 8.5 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
L = 120 mH; Tj=T
inductive load switched off
RRMmax
prior to surge;
j max
j max
− 45 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Figs 12 and 13 −65 +175 °C
forward voltage IF= 2 A; Tj=T
BYM26A to E −−1.34 V
see Figs 14 and 15
j max
;
BYM26F and G −−1.34 V
forward voltage IF=2A;
BYM26A to E −−2.65 V
see Figs 14 and 15
BYM26F and G −−2.30 V
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYM26A 300 −−V
BYM26B 500 −−V
BYM26C 700 −−V
BYM26D 900 −−V
BYM26E 1100 −−V
BYM26F 1300 −−V
BYM26G 1500 −−V
reverse current VR=V
RRMmax
;
−−10 µA
see Fig.16
V
R=VRRMmax
;
−−150 µA
Tj= 165 °C; see Fig.16
reverse recovery time when switched from
BYM26A to C −−30 ns
BYM26D and E −−75 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.20
BYM26F and G −−150 ns
1996 May 24 3
Philips Semiconductors Product specification
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
d
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
diode capacitance f = 1 MHz; VR=0V;
BYM26A to C − 85 − pF
BYM26D and E − 75 − pF
BYM26F and G − 65 − pF
maximum slope of reverse recovery
current
BYM26A to C −− 7A/µs
BYM26D and E −− 6A/µs
BYM26F and G −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
thermal resistance from junction to ambient note 1 75 K/W
see Figs 17 and 18
when switched from
IF= 1 A to VR≥ 30 V and
dIF/dt = −1A/µs;
see Fig.21
‘General Part of Handbook SC01’.
1996 May 24 4
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