Philips BYM26C-24, BYM26C-20, BYM26E-20, BYM26E Datasheet
DATA SH EET
Product specification
Supersedes data of February 1994
1996 May 24
DISCRETE SEMICONDUCTORS
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D118
1996 May 24 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYM26A − 200 V
BYM26B − 400 V
BYM26C − 600 V
BYM26D − 800 V
BYM26E − 1000 V
BYM26F − 1200 V
BYM26G − 1400 V
V
R
continuous reverse voltage
BYM26A − 200 V
BYM26B − 400 V
BYM26C − 600 V
BYM26D − 800 V
BYM26E − 1000 V
BYM26F − 1200 V
BYM26G − 1400 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYM26A to E − 2.30 A
BYM26F and G − 2.40 A
I
F(AV)
average forward current T
amb
=65°C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYM26A to E − 1.05 A
BYM26F and G − 1.00 A
1996 May 24 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
FRM
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYM26A to E − 19 A
BYM26F and G − 21 A
I
FRM
repetitive peak forward current T
amb
=65°C; see Figs 8 and 9
BYM26A to E − 8.0 A
BYM26F and G − 8.5 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
− 45 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to surge;
inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Figs 12 and 13 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 2 A; Tj=T
j max
;
see Figs 14 and 15
BYM26A to E −−1.34 V
BYM26F and G −−1.34 V
V
F
forward voltage IF=2A;
see Figs 14 and 15
BYM26A to E −−2.65 V
BYM26F and G −−2.30 V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 0.1 mA
BYM26A 300 −−V
BYM26B 500 −−V
BYM26C 700 −−V
BYM26D 900 −−V
BYM26E 1100 −−V
BYM26F 1300 −−V
BYM26G 1500 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.16
−−10 µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.16
−−150 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.20
BYM26A to C −−30 ns
BYM26D and E −−75 ns
BYM26F and G −−150 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1996 May 24 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
C
d
diode capacitance f = 1 MHz; VR=0V;
see Figs 17 and 18
BYM26A to C − 85 − pF
BYM26D and E − 75 − pF
BYM26F and G − 65 − pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to VR≥ 30 V and
dIF/dt = −1A/µs;
see Fig.21
BYM26A to C −− 7A/µs
BYM26D and E −− 6A/µs
BYM26F and G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
--------
Loading...