DISCRETE SEMICONDUCTORS
handbook, 2 columns
M3D118
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification |
1996 May 24 |
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙Available in ammo-pack
∙Also available with preformed leads for easy insertion.
DESCRIPTION |
construction. This package is |
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Rugged glass SOD64 package, |
hermetically sealed and fatigue free |
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as coefficients of expansion of all |
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using a high temperature alloyed |
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used parts are matched. |
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k
MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYM26A |
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− |
200 |
V |
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BYM26B |
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− |
400 |
V |
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BYM26C |
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− |
600 |
V |
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BYM26D |
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− |
800 |
V |
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BYM26E |
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− |
1000 |
V |
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BYM26F |
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− |
1200 |
V |
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BYM26G |
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− |
1400 |
V |
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VR |
continuous reverse voltage |
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BYM26A |
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− |
200 |
V |
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BYM26B |
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− |
400 |
V |
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BYM26C |
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− |
600 |
V |
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BYM26D |
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− |
800 |
V |
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BYM26E |
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− |
1000 |
V |
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BYM26F |
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− |
1200 |
V |
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BYM26G |
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− |
1400 |
V |
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IF(AV) |
average forward current |
Ttp = 55 °C; lead length = 10 mm; |
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BYM26A to E |
see Figs 2 and 3; |
− |
2.30 |
A |
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BYM26F and G |
averaged over any 20 ms period; |
− |
2.40 |
A |
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see also Figs 10 and 11 |
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IF(AV) |
average forward current |
Tamb = 65 °C; PCB mounting (see |
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BYM26A to E |
Fig.19); see Figs 4 and 5; |
− |
1.05 |
A |
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BYM26F and G |
averaged over any 20 ms period; |
− |
1.00 |
A |
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see also Figs 10 and 11 |
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1996 May 24 |
2 |
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IFRM |
repetitive peak forward current |
Ttp = 55 °C; see Figs 6 and 7 |
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BYM26A to E |
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− |
19 |
A |
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BYM26F and G |
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− |
21 |
A |
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IFRM |
repetitive peak forward current |
Tamb = 65 °C; see Figs 8 and 9 |
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BYM26A to E |
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− |
8.0 |
A |
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BYM26F and G |
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− |
8.5 |
A |
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IFSM |
non-repetitive peak forward current |
t = 10 ms half sine wave; Tj = Tj max |
− |
45 |
A |
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prior to surge; VR = VRRMmax |
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ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj max prior to surge; |
− |
10 |
mJ |
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avalanche energy |
inductive load switched off |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
see Figs 12 and 13 |
−65 |
+175 |
°C |
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 2 A; Tj = Tj max; |
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BYM26A to E |
see Figs 14 and 15 |
− |
− |
1.34 |
V |
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BYM26F and G |
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− |
− |
1.34 |
V |
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VF |
forward voltage |
IF = 2 A; |
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BYM26A to E |
see Figs 14 and 15 |
− |
− |
2.65 |
V |
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BYM26F and G |
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− |
− |
2.30 |
V |
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V(BR)R |
reverse avalanche breakdown |
IR = 0.1 mA |
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voltage |
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BYM26A |
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300 |
− |
− |
V |
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BYM26B |
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500 |
− |
− |
V |
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BYM26C |
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700 |
− |
− |
V |
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BYM26D |
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900 |
− |
− |
V |
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BYM26E |
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1100 |
− |
− |
V |
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BYM26F |
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1300 |
− |
− |
V |
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BYM26G |
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1500 |
− |
− |
V |
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IR |
reverse current |
VR = VRRMmax; |
− |
− |
10 |
μA |
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see Fig.16 |
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VR = VRRMmax; |
− |
− |
150 |
μA |
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Tj = 165 °C; see Fig.16 |
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trr |
reverse recovery time |
when switched from |
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BYM26A to C |
IF = 0.5 A to IR = 1 A; |
− |
− |
30 |
ns |
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BYM26D and E |
measured at IR = 0.25 A; |
− |
− |
75 |
ns |
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see Fig.20 |
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BYM26F and G |
− |
− |
150 |
ns |
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1996 May 24 |
3 |
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
MAX. |
UNIT |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; |
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BYM26A to C |
see Figs 17 and 18 |
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- |
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85 |
- |
pF |
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BYM26D and E |
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- |
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75 |
- |
pF |
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BYM26F and G |
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- |
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65 |
- |
pF |
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dIR |
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maximum slope of reverse recovery |
when switched from |
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-------- |
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current |
IF = 1 A to VR ³ 30 V and |
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dt |
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dIF/dt = -1 A/ms; |
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- |
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- |
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A/ms |
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BYM26A to C |
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7 |
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see Fig.21 |
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BYM26D and E |
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- |
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- |
6 |
A/ms |
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BYM26F and G |
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- |
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- |
5 |
A/ms |
THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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lead length = 10 mm |
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25 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
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note 1 |
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75 |
K/W |
Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’.
1996 May 24 |
4 |