Philips BYG90-90 Datasheet

DISCRETE SEMICONDUCTORS

handbook, halfpage

M3D113

DATA SH EET

BYG90-90

Schottky barrier rectifier diode

Product specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC01

1996 May 13

Philips Semiconductors Product specification

Fig.1 Simplified outline (SOD106A) and symbol.

handbook, 4 columns

MAM129 - 1

Top view

k a

cathode identifier

Schottky barrier rectifier diode BYG90-90

FEATURES

• Low switching losses

• High breakdown voltage

• Capability of absorbing very high

DESCRIPTION

The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar
technology, and encapsulated in the rectangular SOD106A plastic SMD
package.

surge current

• Fast recovery time

• Guard ring protected

• Plastic SMD package.

APPLICATIONS

• Low power switched-mode power
supplies

• Rectifying

• Polarity protection.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

V

RRM

V

RWM

I

F(AV)

I

FSM

continuous reverse voltage 90 V
repetitive peak reverse voltage 90 V

crest working reverse voltage 90 V

T

average forward current

= 100 °C; see Fig.2;

amb

R

= 13.5 K/W; note 1;

th j-a

V

R(equiv)

= 0.2 V; note 2

non-repetitive peak forward current t = 8.3 ms half sine wave;

−

−

1 A

30 A

JEDEC method

I

RSM

T
T

stg
j

non-repetitive peak reverse current tp= 100 µs
storage temperature
junction temperature

−

−65

−

0.5 A
+150 °C
150 °C

Notes

1. Refer to SOD106A standard mounting conditions.

2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power

losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and I

1996 May 13 2

rating will be available on request.

F(AV)