Philips BYG90-40 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D113
BYG90-40 series
Schottky barrier rectifier diodes
Product specification
File under Discrete Semiconductors, SC01
1996 May 06
Philips Semiconductors Product specification
Schottky barrier rectifier diodes BYG90-40 series
FEATURES
• Low switching losses
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power switched-mode power
supplies
• Rectifying
• Polarity protection.
handbook, 4 columns
cathode identifier
k a
ka
Top view
MAM129 - 1
DESCRIPTION
The BYG 90-40 series consists of
Schottky barrier rectifier diodes,
fabricated in planar technology, and
encapsulated in rectangular
SOD106A plastic SMD packages.
Fig.1 Simplified outline (SOD106A), pin configuration and symbol.
1996 May 06 2
Philips Semiconductors Product specification
Schottky barrier rectifier diodes BYG90-40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
V
RRM
V
RWM
I
F(AV)
I
FSM
I
RSM
T
stg
T
j
continuous reverse voltage
BYG90-20
BYG90-30
BYG90-40
repetitive peak reverse voltage
BYG90-20
BYG90-30
BYG90-40
crest working reverse voltage
BYG90-20
BYG90-30
BYG90-40
T
average forward current
=65°C; see Fig.2;
amb
R
= 80 K/W; note 1;
th j-a
V
R(equiv)
= 0.2 V; note 2
non-repetitive peak forward current t = 8.3 µs half sine wave;
JEDEC method
non-repetitive peak reverse current tp= 100 µs
storage temperature
junction temperature
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
20 V
30 V
40 V
20 V
30 V
40 V
20 V
30 V
40 V
1A
30 A
0.5 A
+125 °C
125 °C
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
PR and I
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
R
rating will be available on request.
F(AV)
1996 May 06 3
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