Philips BYG85B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D168
BYG85B
Fast soft-recovery rectifier
Product specification
1998 Nov 25
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYG85B
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
temperature
• Low leakage current
• Excellent stability
• UL 94V-O classified plastic
handbook, 4 columns
ka
cathode
band
package
• Shipped in 12 mm embossed tape.
Top view Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp= 100 °C; averaged over any
− 2.5 A
20 ms period; see Figs 2 and 7
I
F(AV)
average forward current T
=60°C; AL2O3 PCB mounting
amb
− 1.3 A
(see Fig.11); averaged over any
20 ms period; see Fig.3
I
F(AV)
average forward current T
=60°C; epoxy PCB mounting
amb
− 0.98 A
(see Fig.11); averaged over any
20 ms period; see Fig.3
I
FRM
I
FRM
repetitive peak forward current Ttp= 100 °C; see Fig.3 − 23 A
repetitive peak forward current T
=60°C; AL2O3PCB mounting;
amb
− 12 A
see Fig.5
I
FRM
repetitive peak forward current T
=60°C; epoxy PCB mounting;
amb
− 8.5 A
see Fig.6
I
FSM
T
T
stg
j
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
prior to surge; VR=V
RRMmax
j max
storage temperature −65 +175 °C
junction temperature −65 +175 °C
− 35 A
1998 Nov 25 2
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYG85B
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
forward voltage IF= 2 A; Tj=T
I
= 2 A; see Fig.8 −−0.98 V
F
reverse avalanche
IR= 0.1 mA 120 −−V
breakdown voltage
reverse current VR=V
RRMmax
V
R=VRRMmax
see Fig.9
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.13
diode capacitance f = 1 MHz; VR= 0; see Fig.10 − 110 − pF
maximum slope of reverse
recovery current
when switched from I
VR≥30 V and dIF/dt = −1A/µs;
see Fig.12
; see Fig.8 −−0.78 V
j max
; see Fig.9 −− 5µA
; Tj = 165 °C;
−−150 µA
−−12.5 ns
=1A to
F
−− 2A/µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 25 K/W
thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
Notes
1. Device mounted on Al
printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.11.
2O3
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.11.
For more information please refer to the
‘General Part of associated Handbook’
.
1998 Nov 25 3
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYG85B
GRAPHICAL DATA
handbook, halfpage
5
I
F(AV)
(A)
4
3
2
1
0
0 40 80 200160
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
120
Ttp (°C)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MBK210
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 40 80 200160
a =1.42; VR=V
Device mounted as shown in Fig.11.
1: epoxy PCB 2: Al
RRMmax
(1)
; δ= 0.5; Switched mode application;
PCB.
2O3
120
(2)
T
amb
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MBK211
(°C)
30
handbook, full pagewidth
I
FRM
(A)
20
10
0
−2
10
Ttp= 100°C; R
V
RRMmax
th j-tp
during 1 -δ; curves include derating for T
= 25K/W.
δ = 0.05
0.1
0.2
0.5
1.0
−1
10
j max
1
at V
RRM
= 100 V.
10 10
2
3
10
tp (ms)
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBK212
4
10
1998 Nov 25 4
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