Philips BYG80F, BYG80D, BYG80C, BYG80A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

k, halfpage

M3D168

BYG80 series

Ultra fast low-loss
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 May 24
File under Discrete Semiconductors, SC01

1997 Nov 25

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• UL 94V-O classified plastic
package

• Shipped in 12 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

DESCRIPTION

DO-214AC surface mountable
package with glass passivated chip.

handbook, 4 columns

ka

cathode
band

Top view Side view

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

BYG80 series

The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.

MSA474

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V

V

R

continuous reverse voltage

BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V

I

F(AV)

average forward current Ttp= 100 °C; see Figs 2, 3 and 4

BYG80A to D − 2.4 A
BYG80F; BYG80G − 2.3 A

averaged over any 20 ms period;
see also Figs 17, 18 and 19

BYG80J − 2.0 A

I

F(AV)

average forward current T

BYG80A to D − 1.25 A
BYG80F; BYG80G − 1.15 A

=60°C; AL2O3 PCB mounting

amb

(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19

BYG80J − 0.95 A

1997 Nov 25 2

Philips Semiconductors Product specification

Ultra fast low-loss

BYG80 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F(AV)

I

FRM

I

FRM

I

FRM

I

FSM

E

RSM

T

stg

T

j

average forward current T

BYG80A to D − 0.95 A
BYG80F; BYG80G − 0.85 A
BYG80J − 0.65 A

repetitive peak forward current Ttp= 100 °C; see Figs 8, 9 and 10

BYG80A to D − 21 A
BYG80F; BYG80G − 21 A
BYG80J − 18 A

repetitive peak forward current T

BYG80A to D − 11 A
BYG80F; BYG80G − 11 A
BYG80J − 9A

repetitive peak forward current T

BYG80A to D − 8A
BYG80F; BYG80G − 8A
BYG80J − 6A

non-repetitive peak forward current t = 8.3 ms half sine wave; Tj=25°C

BYG80A to D − 36 A
BYG80F; BYG80G; BYG80J − 32 A

non-repetitive peak reverse
avalanche energy

storage temperature −65 +175 °C
junction temperature see Fig.20 −65 +175 °C

=60°C; epoxy PCB mounting

amb

(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19

=60°C; AL2O3PCB mounting;

amb

see Figs 11, 12 and 13

=60°C; epoxy PCB mounting;

amb

see Figs 14, 15 and 16

prior to surge; VR=V

L = 120 mH; Tj=T

RRMmax

prior to surge;

j max

inductive load switched off

− 10 mJ

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 1 A; Tj=T

BYG80A to D −−0.67 V

see Figs 21, 22 and 23

j max

;

BYG80F; BYG80G −−0.73 V
BYG80J −−0.96 V

V

F

forward voltage IF= 1 A; see Figs 21, 22 and 23

BYG80A to D −−0.93 V
BYG80F; BYG80G −−0.98 V
BYG80J −−1.20 V

1997 Nov 25 3

Philips Semiconductors Product specification

Ultra fast low-loss

BYG80 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)R

I

R

I

R

t

rr

C

d

dI

R

-------­dt

reverse avalanche
breakdown voltage

BYG80A 55 −−V
BYG80B 110 −−V
BYG80C 165 −−V
BYG80D 220 −−V
BYG80F 330 −−V
BYG80G 440 −−V
BYG80J 675 −−V

reverse current VR=V

reverse current VR=V

BYG80A to D −−100 µA
BYG80F; BYG80G and J −−150 µA

reverse recovery time when switched from IF= 0.5 A to

BYG80A to D −−25 ns
BYG80F; BYG80G and J −−50 ns

diode capacitance f = 1 MHz; VR= 0; see Fig.26

BYG80A to D − 90 − pF
BYG80F; BYG80G − 70 − pF
BYG80J − 65 − pF

maximum slope of reverse
recovery current

BYG80A to D −− 3A/µs
BYG80F; BYG80G and J −− 4A/µs

IR= 0.1 mA

;

RRMmax

see Figs 24 and 25

; Tj= 165 °C;

RRMmax

see Figs 24 and 25

IR= 1 A; measured at IR= 0.25 A;
see Fig.29

when switched from IF= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.28

−−10 µA

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 25 K/W
thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

Notes

1. Device mounted on Al

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.

2O3

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the

‘General Part of Handbook SC01’

.

1997 Nov 25 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

4

I

F(AV)

(A)

3

2

1

0

0 200

BYG80A toD

Switched mode application; VR=V

100

T

; δ = 0.5; a = 1.42.

RRMmax

(oC)

tp

MGL081

handbook, halfpage

4

I

F(AV)

(A)

3

2

1

0

0 40 200

BYG80F and G

Switched mode application; VR=V

BYG80 series

80 120 160

; δ = 0.5; a= 1.42.

RRMmax

MBK454

Ttp (°C)

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

4.0

handbook, halfpage

I

FAV

(A)

3.0

2.0

1.0

0

040

BYG80J

Switched mode application.
VR=V

; δ = 0.5; a= 1.42.

RRMmax

80 120 160

Ttp (οC)

MGL094

200

Fig.3 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

2

I

F(AV)

(A)

1.5

1

0.5

0

0

BYG80A to D

Switched mode application; VR=V
Device mounted as shown in Fig.27;

PCB; 2: epoxy PCB.

1: Al

2O3

(1)

(2)

100

T

; δ = 0.5; a= 1.42

RRMmax

amb

(οC)

MGL079

200

Fig.4 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

1997 Nov 25 5

Fig.5 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

handbook, halfpage

2

I

F(AV)

(A)

1.5

1

0.5

0

0

BYG80F and G

Switched mode application; VR=V
Device mounted as shown in Fig.27;

PCB; 2: epoxy PCB.

1: Al

2O3

(1)

(2)

100

T

; δ = 0.5; a= 1.42

RRMmax

amb

(οC)

MGL080

200

1.6

handbook, halfpage

I

F(AV)

(A)

1.2

(1)

0.8

(2)

0.4

0

BYG80J

Switched mode application; VR=V
Device mounted as shown in Fig.27;

PCB; 2: epoxy PCB.

1: Al

2O3

40

0 200

80 120

RRMmax

BYG80 series

MGL092

160

o

Tamb (

C)

; δ = 0.5; a= 1.42

Fig.6 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

30

handbook, full pagewidth

I

FRM

(A)

10

δ = 0.05

0.1

0.2

0.5
1

−1

110

at V

j max

20

10

0

−2

10

BYG80A to D

Ttp= 100 °C; R
V

during 1 - δ; curves include derating for T

RRMmax

th j-tp

= 25 K/W.

RRM

= 200 V.

Fig.7 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

MGL086

2

10

3

10

t

(ms)

P

4

10

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 25 6