Philips BYG80E, BYG80B, BYG80J, BYG80G Datasheet

DATA SH EET

Product specification
Supersedes data of 1996 May 24

1997 Nov 25

DISCRETE SEMICONDUCTORS

BYG80 series

Ultra fast low-loss
controlled avalanche rectifiers

k, halfpage

M3D168

1997 Nov 25 2

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYG80 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• UL 94V-O classified plastic
package

• Shipped in 12 mm embossed tape.

DESCRIPTION

DO-214AC surface mountable
package with glass passivated chip.

The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

handbook, 4 columns

MSA474

Top view Side view

cathode
band

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V

V

R

continuous reverse voltage

BYG80A − 50 V
BYG80B − 100 V
BYG80C − 150 V
BYG80D − 200 V
BYG80F − 300 V
BYG80G − 400 V
BYG80J − 600 V

I

F(AV)

average forward current Ttp= 100 °C; see Figs 2, 3 and 4

averaged over any 20 ms period;
see also Figs 17, 18 and 19

BYG80A to D − 2.4 A
BYG80F; BYG80G − 2.3 A
BYG80J − 2.0 A

I

F(AV)

average forward current T

amb

=60°C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19

BYG80A to D − 1.25 A
BYG80F; BYG80G − 1.15 A
BYG80J − 0.95 A

1997 Nov 25 3

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYG80 series

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

I

F(AV)

average forward current T

amb

=60°C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19

BYG80A to D − 0.95 A
BYG80F; BYG80G − 0.85 A
BYG80J − 0.65 A

I

FRM

repetitive peak forward current Ttp= 100 °C; see Figs 8, 9 and 10

BYG80A to D − 21 A
BYG80F; BYG80G − 21 A
BYG80J − 18 A

I

FRM

repetitive peak forward current T

amb

=60°C; AL2O3PCB mounting;
see Figs 11, 12 and 13

BYG80A to D − 11 A
BYG80F; BYG80G − 11 A
BYG80J − 9A

I

FRM

repetitive peak forward current T

amb

=60°C; epoxy PCB mounting;
see Figs 14, 15 and 16

BYG80A to D − 8A
BYG80F; BYG80G − 8A
BYG80J − 6A

I

FSM

non-repetitive peak forward current t = 8.3 ms half sine wave; Tj=25°C

prior to surge; VR=V

RRMmax

BYG80A to D − 36 A
BYG80F; BYG80G; BYG80J − 32 A

E

RSM

non-repetitive peak reverse
avalanche energy

L = 120 mH; Tj=T

j max

prior to surge;

inductive load switched off

− 10 mJ

T

stg

storage temperature −65 +175 °C

T

j

junction temperature see Fig.20 −65 +175 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

forward voltage IF= 1 A; Tj=T

j max

;

see Figs 21, 22 and 23

BYG80A to D −−0.67 V
BYG80F; BYG80G −−0.73 V
BYG80J −−0.96 V

V

F

forward voltage IF= 1 A; see Figs 21, 22 and 23

BYG80A to D −−0.93 V
BYG80F; BYG80G −−0.98 V
BYG80J −−1.20 V

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1997 Nov 25 4

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYG80 series

THERMAL CHARACTERISTICS

Notes

1. Device mounted on Al

2O3

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the

“General Part of associated Handbook”

.

V

(BR)R

reverse avalanche
breakdown voltage

IR= 0.1 mA

BYG80A 55 −−V
BYG80B 110 −−V
BYG80C 165 −−V
BYG80D 220 −−V
BYG80F 330 −−V
BYG80G 440 −−V
BYG80J 675 −−V

I

R

reverse current VR=V

RRMmax

;

see Figs 24 and 25

−−10 µA

I

R

reverse current VR=V

RRMmax

; Tj= 165 °C;

see Figs 24 and 25

BYG80A to D −−100 µA
BYG80F; BYG80G and J −−150 µA

t

rr

reverse recovery time when switched from IF= 0.5 A to

IR= 1 A; measured at IR= 0.25 A;
see Fig.29

BYG80A to D −−25 ns
BYG80F; BYG80G and J −−50 ns

C

d

diode capacitance f = 1 MHz; VR= 0; see Fig.26

BYG80A to D − 90 − pF
BYG80F; BYG80G − 70 − pF
BYG80J − 65 − pF

maximum slope of reverse
recovery current

when switched from IF= 1 A to
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.28

BYG80A to D −− 3A/µs
BYG80F; BYG80G and J −− 4A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point 25 K/W

R

th j-a

thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dI

R

dt

--------

1997 Nov 25 5

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYG80 series

GRAPHICAL DATA

Fig.2 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

BYG80A toD

Switched mode application; VR=V

RRMmax

; δ = 0.5; a = 1.42.

handbook, halfpage

0 200

100

T

tp

(oC)

4

3

I

F(AV)

(A)

1

0

2

MGL081

BYG80F and G

Switched mode application; VR=V

RRMmax

; δ = 0.5; a= 1.42.

Fig.3 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

0 40 200

Ttp (°C)

I

F(AV)

(A)

4

3

1

0

2

80 120 160

MBK454

BYG80J

Switched mode application.
VR=V

RRMmax

; δ = 0.5; a= 1.42.

Fig.4 Maximum permissible average forward

current as a function of tie-point temperature
(including losses due to reverse leakage).

handbook, halfpage

040

I

FAV

(A)

200

4.0

3.0

1.0

0

2.0

80 120 160

Ttp (οC)

MGL094

Fig.5 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

BYG80A to D

Switched mode application; VR=V

RRMmax

; δ = 0.5; a= 1.42

Device mounted as shown in Fig.27;
1: Al

2O3

PCB; 2: epoxy PCB.

handbook, halfpage

0

(1)

(2)

200

100

T

amb

(οC)

2

1.5

I

F(AV)

(A)

0.5

0

1

MGL079

1997 Nov 25 6

Philips Semiconductors Product specification

Ultra fast low-loss
controlled avalanche rectifiers

BYG80 series

BYG80F and G

Switched mode application; VR=V

RRMmax

; δ = 0.5; a= 1.42

Device mounted as shown in Fig.27;
1: Al

2O3

PCB; 2: epoxy PCB.

Fig.6 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

handbook, halfpage

0

(1)

(2)

200

100

T

amb

(οC)

2

1.5

I

F(AV)

(A)

0.5

0

1

MGL080

BYG80J

Switched mode application; VR=V

RRMmax

; δ = 0.5; a= 1.42

Device mounted as shown in Fig.27;
1: Al

2O3

PCB; 2: epoxy PCB.

Fig.7 Maximum permissible average forward

current as a function of ambient temperature
(including losses due to reverse leakage).

handbook, halfpage

0 200

0

0.4

0.8

1.2

1.6

40

(1)

(2)

I

F(AV)

(A)

80 120

Tamb (

o

C)

160

MGL092

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

BYG80A to D

Ttp= 100 °C; R

th j-tp

= 25 K/W.

V

RRMmax

during 1 - δ; curves include derating for T

j max

at V

RRM

= 200 V.

handbook, full pagewidth

30

0

10

I

FRM

(A)

20

MGL086

10

−2

10

−1

110

t

P

(ms)

10

2

10

3

10

4

δ = 0.05

1

0.1

0.2

0.5