Philips BYG70J, BYG70G, BYG70D Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

halfpage

M3D168

BYG70 series

Fast soft-recovery
controlled avalanche rectifiers

Preliminary specification
File under Discrete Semiconductors, SC01

1996 Jun 05

Philips Semiconductors Preliminary specification

Fast soft-recovery
controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• UL 94V-O classified plastic
package

• Shipped in 12 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

DESCRIPTION

DO-214AC surface mountable
package with glass passivated chip.

handbook, 4 columns

ka

cathode
band

Top view Side view

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

BYG70 series

The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.

MSA474

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYG70D − 200 V
BYG70G − 400 V
BYG70J − 600 V

V

R

continuous reverse voltage

BYG70D − 200 V
BYG70G − 400 V
BYG70J − 600 V

I

F(AV)

average forward current averaged over any 20 ms period;

− 1.00 A

Ttp= 100 °C; see Fig.2
averaged over any 20 ms period;

PCB mounting (see Fig.7);

Al

2O3

T

=60°C; see Fig.3

amb

averaged over any 20 ms period;

− 0.53 A

− 0.39 A

epoxy PCB mounting (see Fig.7);

=60°C; see Fig.3

T

amb

I

FSM

E

T
T

RSM

stg
j

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
inductive load switched off

prior to surge;

j max

RRMmax

prior to surge;

j max

− 20 A

− 10

mJ

storage temperature −65 +175 °C
junction temperature

see Fig.4

−65 +175 °C

1996 Jun 05 2