Philips byg60 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

, halfpage

M3D168

BYG60 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 June 05

2000 Jul 03

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• UL 94V-O classified plastic
package

• Shipped in 12 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

DESCRIPTION

DO-214AC surface mountable
package with glass passivated chip.

handbook, 4 columns

ka

Top view Side view

cathode
band

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

BYG60 series

Thewell-definedvoid-freecaseisofa
transfer-moulded thermo-setting
plastic.

MSA474

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYG60D − 200 V
BYG60G − 400 V
BYG60J − 600 V
BYG60K − 800 V
BYG60M − 1000 V

V

R

continuous reverse voltage

BYG60D − 200 V
BYG60G − 400 V
BYG60J − 600 V
BYG60K − 800 V
BYG60M − 1000 V

I

F(AV)

average forward current averaged over any 20 ms period;

− 1.9 A

Ttp= 100 °C; see Fig.2
averaged over any 20 ms period;

Al

printed-circuit board mounting

2O3

(see Fig.7); T

=60°C; see Fig.3

amb

averaged over any 20 ms period;

− 0.9 A

− 0.65 A

epoxy printed-circuit board mounting

I

FSM

(see Fig.7); T

non-repetitive peak forward current t = 10 ms half sine wave;

Tj=T

j max

VR=V

RRMmax

=60°C; see Fig.3

amb

prior to surge;

− 25 A

2000 Jul 03 2

Philips Semiconductors Product specification

Fast soft-recovery

BYG60 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

RSM

non-repetitive peak reverse
avalanche energy

BYG60D to J − 10 mJ
BYG60K and M − 7mJ

T

stg

T

j

storage temperature −65 +175 °C
junction temperature see Fig.4 −65 +175 °C

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

V

F

(BR)R

forward voltage IF= 1 A; Tj=T

= 1 A; see Fig.5 −−1.2 V

I

F

reverse avalanche

IR= 0.1 mA

breakdown voltage

BYG60D 300 −−V
BYG60G 500 −−V
BYG60J 700 −−V
BYG60K 900 −−V
BYG60M 1100 −−V

I

R

reverse current VR=V

see Fig.6
V

R=VRRMmax

see Fig.6

t

rr

C

d

reverse recovery time when switched from IF= 0.5 A to

BYG60D to J −−250 ns
BYG60K and M −−300 ns

IR= 1 A; measured at IR= 0.25 A;
see Fig.8

diode capacitance VR= 0 V; f = 1 MHz

BYG60D to J − 30 − pF
BYG60K and M − 25 − pF

L = 120 mH; Tj=T

j max

inductive load switched off

see Fig.5 −−0.98 V

j max;

;

RRMmax

; Tj= 165 °C;

prior to surge;

−−5µA

−−100 µA

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 25 K/W
thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

Notes

1. Device mounted on Al

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.

2O3

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.

For more information please refer to the

‘General Part of associated Handbook’

.

2000 Jul 03 3