Philips BYG50J, BYG50G, BYG50D, BYG50M, BYG50K Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

k, halfpage

M3D168

BYG50 series

Controlled avalanche rectifiers

Preliminary specification
File under Discrete Semiconductors, SC01

1996 May 24

Philips Semiconductors Preliminary specification

Controlled avalanche rectifiers BYG50 series

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

DO-214AC; SOD106 surface
mountable package with glass
passivated chip.

The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

handbook, 4 columns

ka

cathode
band

• UL 94V-O classified plastic
package

• Shipped in 12 mm embossed tape.

Top view Side view

MSA474

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYG50D − 200 V
BYG50G − 400 V
BYG50J − 600 V
BYG50K − 800 V
BYG50M − 1000 V

V

R

continuous reverse voltage

BYG50D − 200 V
BYG50G − 400 V
BYG50J − 600 V
BYG50K − 800 V
BYG50M − 1000 V

I

F(AV)

average forward current averaged over any 20 ms

− 2.1 A

period; Ttp= 100 °C; see Fig.2
averaged over any 20 ms

period; Al
Fig.7); T

PCB mounting (see

2O3

=60°C; see Fig.3

amb

averaged over any 20 ms

− 1.0 A

− 0.7 A

period; epoxy PCB mounting
(see Fig.7); T

amb

=60°C;

see Fig.3

I

FSM

non-repetitive peak forward current t = 10 ms half sinewave;

Tj=T
VR=V

prior to surge;

j max

RRMmax

− 30 A

1996 May 24 2