Philips BYD77F, BYD77D, BYD77C, BYD77B, BYD77A Datasheet
DATA SH EET
Product specification
Supersedes data of 1996 May 24
1999 Nov 15
DISCRETE SEMICONDUCTORS
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 15 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount
rectifier outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V
V
R
continuous reverse voltage
BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V
I
F(AV)
average forward current Ttp= 105 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D − 2.00 A
BYD77E to G − 1.85 A
I
F(AV)
average forward current T
amb
=60°C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D − 0.85 A
BYD77E to G − 0.80 A
1999 Nov 15 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
I
FRM
repetitive peak forward current Ttp= 105 °C; see Figs 6 and 7
BYD77A to D − 15 A
BYD77E to G − 13 A
I
FRM
repetitive peak forward current T
amb
=60°C; see Figs 8 and 9
BYD77A to D − 8.5 A
BYD77E to G − 8.0 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
− 25 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=25°C prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 12 and 13
BYD77A to D −−0.75 V
BYD77E to G −−0.83 V
V
F
forward voltage IF=1A;
see Figs 12 and 13
BYD77A to D −−0.98 V
BYD77E to G −−1.05 V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 0.1 mA
BYD77A 55 −−V
BYD77B 110 −−V
BYD77C 165 −−V
BYD77D 220 −−V
BYD77E 275 −−V
BYD77F 330 −−V
BYD77G 440 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.14
−− 1µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.14
−−100 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD77A to D −−25 ns
BYD77E to G −−50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Nov 15 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the
“General Part of associated Handbook”
.
C
d
diode capacitance f = 1 MHz; VR=0V;
see Fig.15
BYD77A to D − 50 − pF
BYD77E to G − 40 − pF
maximum slope of reverse recovery
current
when switched from
I
F
=1AtoVR≥30 V and
dIF/dt = −1A/µs;
see Fig.17
BYD77A to D −− 4A/µs
BYD77E to G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
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