Philips BYD77F, BYD77D, BYD77C, BYD77B, BYD77A Datasheet

DATA SH EET
Product specification Supersedes data of 1996 May 24
1999 Nov 15
DISCRETE SEMICONDUCTORS
BYD77 series
Ultra fast low-loss controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 15 2
Philips Semiconductors Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Shipped in 8 mm embossed tape
Smallest surface mount
rectifier outline.
DESCRIPTION
Cavity free cylindrical glass SOD87 package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD77A 50 V BYD77B 100 V BYD77C 150 V BYD77D 200 V BYD77E 250 V BYD77F 300 V BYD77G 400 V
V
R
continuous reverse voltage
BYD77A 50 V BYD77B 100 V BYD77C 150 V BYD77D 200 V BYD77E 250 V BYD77F 300 V BYD77G 400 V
I
F(AV)
average forward current Ttp= 105 °C; see Figs 2 and 3;
averaged over any 20 ms period; see also Figs 10 and 11
BYD77A to D 2.00 A BYD77E to G 1.85 A
I
F(AV)
average forward current T
amb
=60°C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11
BYD77A to D 0.85 A BYD77E to G 0.80 A
1999 Nov 15 3
Philips Semiconductors Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
I
FRM
repetitive peak forward current Ttp= 105 °C; see Figs 6 and 7
BYD77A to D 15 A BYD77E to G 13 A
I
FRM
repetitive peak forward current T
amb
=60°C; see Figs 8 and 9
BYD77A to D 8.5 A BYD77E to G 8.0 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
25 A
E
RSM
non-repetitive peak reverse avalanche energy
L = 120 mH; Tj=25°C prior to surge; inductive load switched off
10 mJ
T
stg
storage temperature 65 +175 °C
T
j
junction temperature 65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 12 and 13
BYD77A to D −−0.75 V BYD77E to G −−0.83 V
V
F
forward voltage IF=1A;
see Figs 12 and 13
BYD77A to D −−0.98 V BYD77E to G −−1.05 V
V
(BR)R
reverse avalanche breakdown voltage
IR= 0.1 mA
BYD77A 55 −−V BYD77B 110 −−V BYD77C 165 −−V BYD77D 220 −−V BYD77E 275 −−V BYD77F 330 −−V BYD77G 440 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.14
−− 1µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.14
−−100 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A; measured at IR= 0.25 A; see Fig.18
BYD77A to D −−25 ns BYD77E to G −−50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Nov 15 4
Philips Semiconductors Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.16. For more information please refer to the
“General Part of associated Handbook”
.
C
d
diode capacitance f = 1 MHz; VR=0V;
see Fig.15
BYD77A to D 50 pF BYD77E to G 40 pF
maximum slope of reverse recovery current
when switched from I
F
=1AtoVR≥30 V and dIF/dt = 1A/µs; see Fig.17
BYD77A to D −− 4A/µs BYD77E to G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
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