Philips byd77 DATASHEETS
DISCRETE SEMICONDUCTORS
b
DATA SH EET
ook, halfpage
M3D121
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1999 Nov 15
Philips Semiconductors Product specification
Ultra fast low-loss
BYD77 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount
rectifier outline.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V
V
R
continuous reverse voltage
BYD77A − 50 V
BYD77B − 100 V
BYD77C − 150 V
BYD77D − 200 V
BYD77E − 250 V
BYD77F − 300 V
BYD77G − 400 V
I
F(AV)
average forward current Ttp= 105 °C; see Figs 2 and 3;
BYD77A to D − 2.00 A
BYD77E to G − 1.85 A
I
F(AV)
average forward current T
BYD77A to D − 0.85 A
BYD77E to G − 0.80 A
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
handbook, 4 columns
ka
Fig.1 Simplified outline (SOD87) and symbol.
averaged over any 20 ms period;
see also Figs 10 and 11
=60°C; PCB mounting (see
amb
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
MAM061
1999 Nov 15 2
Philips Semiconductors Product specification
Ultra fast low-loss
BYD77 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
repetitive peak forward current Ttp= 105 °C; see Figs 6 and 7
BYD77A to D − 15 A
BYD77E to G − 13 A
repetitive peak forward current T
=60°C; see Figs 8 and 9
amb
BYD77A to D − 8.5 A
BYD77E to G − 8.0 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
L = 120 mH; Tj=25°C prior to
surge; inductive load switched off
RRMmax
j max
− 25 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature −65 +175 °C
forward voltage IF= 1 A; Tj=T
BYD77A to D −−0.75 V
see Figs 12 and 13
j max
;
BYD77E to G −−0.83 V
forward voltage IF=1A;
BYD77A to D −−0.98 V
see Figs 12 and 13
BYD77E to G −−1.05 V
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD77A 55 −−V
BYD77B 110 −−V
BYD77C 165 −−V
BYD77D 220 −−V
BYD77E 275 −−V
BYD77F 330 −−V
BYD77G 440 −−V
reverse current VR=V
RRMmax
;
−− 1µA
see Fig.14
V
R=VRRMmax
;
−−100 µA
Tj= 165 °C; see Fig.14
reverse recovery time when switched from
BYD77A to D −−25 ns
BYD77E to G −−50 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
1999 Nov 15 3
Philips Semiconductors Product specification
Ultra fast low-loss
BYD77 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
d
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the
diode capacitance f = 1 MHz; VR=0V;
BYD77A to D − 50 − pF
BYD77E to G − 40 − pF
maximum slope of reverse recovery
current
BYD77A to D −− 4A/µs
BYD77E to G −− 5A/µs
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
“General Part of associated Handbook”
see Fig.15
when switched from
I
=1AtoVR≥30 V and
F
dIF/dt = −1A/µs;
see Fig.17
.
1999 Nov 15 4
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