Philips BYD73E, BYD73C-AT Datasheet
DATA SH EET
Product specification
Supersedes data of 1996 May 24
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYD73 series
Ultra fast low-loss
controlled avalanche rectifiers
k, halfpage
M3D119
1996 Sep 18 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
ak
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD73A − 50 V
BYD73B − 100 V
BYD73C − 150 V
BYD73D − 200 V
BYD73E − 250 V
BYD73F − 300 V
BYD73G − 400 V
V
R
continuous reverse voltage
BYD73A − 50 V
BYD73B − 100 V
BYD73C − 150 V
BYD73D − 200 V
BYD73E − 250 V
BYD73F − 300 V
BYD73G − 400 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD73A to D − 1.75 A
BYD73E to G − 1.70 A
I
F(AV)
average forward current T
amb
=60°C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD73A to D − 1.00 A
BYD73E to G − 0.95 A
1996 Sep 18 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
FRM
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYD73A to D − 14 A
BYD73E to G − 15 A
I
FRM
repetitive peak forward current T
amb
=60°C; see Figs 8 and 9
BYD73A to D − 8.5 A
BYD73E to G − 9.5 A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 25 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 12 and 13
BYD73A to D −−0.75 V
BYD73E to G −−0.83 V
V
F
forward voltage IF=1A;
see Figs 12 and 13
BYD73A to D −−0.98 V
BYD73E to G −−1.05 V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 0.1 mA
BYD73A 55 −−V
BYD73B 110 −−V
BYD73C 165 −−V
BYD73D 220 −−V
BYD73E 275 −−V
BYD73F 330 −−V
BYD73G 440 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.14
−− 1µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.14
−−100 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD73A to D −−25 ns
BYD73E to G −−50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1996 Sep 18 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the
“General Part of associated Handbook”.
C
d
diode capacitance f = 1 MHz; VR=0V;
see Fig.15
BYD73A to D − 50 − pF
BYD73E to G − 40 − pF
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to VR≥ 30 V
and dIF/dt = −1A/µs;
see Fig.17
BYD73A to D −− 4A/µs
BYD73E to G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
R
th j-a
thermal resistance from junction to ambient note 1 120 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
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