Philips BYD67 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D121
BYD67
Ripple blocking diode
Product specification
1998 Nov 20
Philips Semiconductors Product specification
Ripple blocking diode BYD67
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. The SOD87 is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
handbook, 4 columns
ka
absorption capability
• Shipped in 8 mm embossed tape
MAM061
• Smallest surface mount rectifier
package.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 300 V
continuous reverse voltage − 300 V
average forward current Ttp=85°C; see Fig.2;
− 1.2 A
averaged over any 20 ms period;
see also Fig.4
T
=60°C; PCB mounting (see
amb
− 0.4 A
Fig.8); see Fig.3;
averaged over any 20 ms period;
see also Fig.4
I
FRM
I
FSM
repetitive peak forward current Ttp=85°C − 11 A
T
=60°C − 3.7 A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
− 5.0 A
Tj=25°C prior to surge;
VR=V
RRMmax
T
stg
T
j
storage temperature −65 +175 °C
junction temperature −65 +175 °C
1998 Nov 20 2
Philips Semiconductors Product specification
Ripple blocking diode BYD67
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
forward voltage IF= 1 A; Tj=T
I
= 1 A; see Fig.5 −−2.3 V
F
reverse current VR=V
RRMmax
see Fig.6
V
R=VRRMmax
see Fig.6
t
fr
forward recovery time when switched to IF=1A
in 50 ns; see Fig.9
t
on
turn-on time when switched from VF=0to
VF= 3 V; measured between
10% and 90% of I
see Fig.11
t
rr
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at
IR= 0.25 A; see Fig.11
C
d
diode capacitance f = 1 MHz; VR= 0; see Fig.7 − 17 − pF
; see Fig.5 −−1.7 V
j max
;
; Tj= 165 °C;
−−1µA
−−100 µA
−−350 ns
500 −−ns
;
Fmax
−−150 ns
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the
‘General Part of associated Handbook.’
1998 Nov 20 3
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