Philips BYD63 Datasheet
DISCRETE SEMICONDUCTORS
M3D119
DATA SH EET
BYD63
Ripple blocking diode
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC01
1996 Jun 10
Philips Semiconductors Product specification
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
ak
MAM123
Ripple blocking diode BYD63
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 300 V
continuous reverse voltage − 300 V
average forward current averaged over any 20 ms period;
− 0.85 A
Ttp= 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
averaged over any 20 ms period;
T
= 65 °C;
amb
− 0.45 A
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
I
FRM
I
FSM
T
T
stg
j
repetitive peak forward current Ttp= 55 °C − 8.25 A
T
= 65 °C − 4.45 A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj= T
VR= V
prior to surge;
j max
RRMmax
− 5 A
storage temperature −65 +175 °C
junction temperature −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
Ripple blocking diode BYD63
ELECTRICAL CHARACTERISTICS
Tj= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
t
fr
t
on
t
rr
C
d
forward voltage IF= 1 A; Tj= T
; see Fig.5 − − 1.7 V
j max
IF= 1 A; see Fig.5 − − 2.3 V
reverse current VR= V
RRMmax
;
− − 1 µA
see Fig.6
VR= V
RRMmax
; Tj= 165 °C;
− − 100 µA
see Fig.6
forward recovery time when switched to IF= 1 A
− − 350 ns
in 50 ns; see Fig.9
turn-on time when switched from VF= 0 V to
500 − − ns
VF= 3 V; measured between
10% and 90% of I
F max
;
see Fig.11
reverse recovery time when switched from IF= 0.5 A to
− − 150 ns
IR= 1 A; measured at
IR= 0.25 A; see Fig.11
diode capacitance f = 1 MHz; VR= 0 V; see Fig.7 − 17 − pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the
‘General Part of Handbook SC01.’
1996 Jun 10 3
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