Philips BYD57M, BYD57J, BYD57G, BYD57V, BYD57D Datasheet
DATA SH EET
Product specification
Supersedes data of 1996 Jun 05
1998 Dec 04
DISCRETE SEMICONDUCTORS
BYD57 series
Fast soft-recovery controlled
avalanche rectifiers
ook, halfpage
M3D121
1998 Dec 04 2
Philips Semiconductors Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD57 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. The SOD87 is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD87) and symbol.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD57D − 200 V
BYD57G − 400 V
BYD57J − 600 V
BYD57K − 800 V
BYD57M − 1000 V
BYD57U − 1200 V
BYD57V − 1400 V
V
R
continuous reverse voltage
BYD57D − 200 V
BYD57G − 400 V
BYD57J − 600 V
BYD57K − 800 V
BYD57M − 1000 V
BYD57U − 1200 V
BYD57V − 1400 V
I
F(AV)
average forward current Ttp=85°C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD57D to M − 1.0 A
BYD57U and V − 1.2 A
I
F(AV)
average forward current T
amb
=60°C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD57D to M − 0.4 A
BYD57U and V − 0.4 A
I
FRM
repetitive peak forward current Ttp=85°C; see Figs 6 and 7
BYD57D to M − 8.5 A
BYD57U and V − 11 A
1998 Dec 04 3
Philips Semiconductors Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD57 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
FRM
repetitive peak forward current T
amb
=60°C; see Figs 8 and 9
BYD57D to M − 3.0 A
BYD57U and V − 3.7 A
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave; Tj=25°C
prior to surge; VR=V
RRMmax
− 5.0 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 10 mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Fig.12 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 13 and 14
BYD57D to M −−2.1 V
BYD57U and V −−1.7 V
V
F
forward voltage IF=1A;
see Figs 13 and 14
BYD57D to M −−3.6 V
BYD57U and V −−2.3 V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 0.1 mA
BYD57D 300 −−V
BYD57G 500 −−V
BYD57J 700 −−V
BYD57K 900 −−V
BYD57M 1100 −−V
BYD57U 1300 −−V
BYD57V 1500 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.15
−− 5µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.15
−−100 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD57D to J −−30 ns
BYD57K and M −−75 ns
BYD57U and V −−150 ns
C
d
diode capacitance f = 1 MHz; VR=0;
see Fig.16
− 20 − pF
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1998 Dec 04 4
Philips Semiconductors Product specification
Fast soft-recovery controlled
avalanche rectifiers
BYD57 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the
‘General Part of associated Handbook’
.
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to VR≥ 30 V
and dIF/dt = −1A/µs;
see Fig.19
BYD57D to J −− 7A/µs
BYD57K and M −− 6A/µs
BYD57U and V −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
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