Philips byd57 DATASHEETS
DISCRETE SEMICONDUCTORS
b
DATA SH EET
ook, halfpage
M3D121
BYD57 series
Ultra-fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1998 Dec 04
1999 Nov 11
Philips Semiconductors Product specification
Ultra-fast soft-recovery
BYD57 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier
outline.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD57D − 200 V
BYD57G − 400 V
BYD57J − 600 V
BYD57K − 800 V
BYD57M − 1000 V
BYD57U − 1200 V
BYD57V − 1400 V
V
R
continuous reverse voltage
BYD57D − 200 V
BYD57G − 400 V
BYD57J − 600 V
BYD57K − 800 V
BYD57M − 1000 V
BYD57U − 1200 V
BYD57V − 1400 V
I
F(AV)
average forward current Ttp=85°C; see Figs 2 and 3;
BYD57D to M − 1.0 A
BYD57U and V − 1.2 A
I
F(AV)
average forward current T
BYD57D to M − 0.4 A
BYD57U and V − 0.4 A
I
FRM
repetitive peak forward current Ttp=85°C; see Figs 6 and 7
BYD57D to M − 8.5 A
BYD57U and V − 11 A
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. The SOD87 is
handbook, 4 columns
ka
Fig.1 Simplified outline (SOD87) and symbol.
averaged over any 20 ms period;
see also Figs 10 and 11
=60°C; PCB mounting (see
amb
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
MAM061
1999 Nov 11 2
Philips Semiconductors Product specification
Ultra-fast soft-recovery
BYD57 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
C
d
repetitive peak forward current T
=60°C; see Figs 8 and 9
amb
BYD57D to M − 3.0 A
BYD57U and V − 3.7 A
non-repetitive peak forward current t = 10 ms half sinewave; Tj=25°C
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
j max
RRMmax
prior to
− 5.0 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Fig.12 −65 +175 °C
forward voltage IF= 1 A; Tj=T
BYD57D to M −−2.1 V
see Figs 13 and 14
j max
;
BYD57U and V −−1.7 V
forward voltage IF=1A;
BYD57D to M −−3.6 V
see Figs 13 and 14
BYD57U and V −−2.3 V
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD57D 300 −−V
BYD57G 500 −−V
BYD57J 700 −−V
BYD57K 900 −−V
BYD57M 1100 −−V
BYD57U 1300 −−V
BYD57V 1500 −−V
reverse current VR=V
RRMmax
;
−− 5µA
see Fig.15
V
R=VRRMmax
;
−−100 µA
Tj= 165 °C; see Fig.15
reverse recovery time when switched from
BYD57D to J −−30 ns
BYD57K and M −−75 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD57U and V −−150 ns
diode capacitance f = 1 MHz; VR=0;
− 20 − pF
see Fig.16
1999 Nov 11 3
Philips Semiconductors Product specification
Ultra-fast soft-recovery
BYD57 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the
maximum slope of reverse recovery
current
BYD57D to J −− 7A/µs
BYD57K and M −− 6A/µs
BYD57U and V −− 5A/µs
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
‘General Part of associated Handbook’
when switched from
I
=1AtoVR≥30 V and
F
dIF/dt = −1A/µs;
see Fig.19
.
1999 Nov 11 4
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