Philips BYD53G, BYD53D, BYD53V, BYD53U, BYD53K Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D119
BYD53 series
Fast soft-recovery controlled
avalanche rectifiers
Product specification
Supersedes data of 1996 Sep 18
1998 Dec 04
Philips Semiconductors Product specification
Fast soft-recovery controlled
BYD53 series
avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. The SOD81 package is
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
handbook, 4 columns
• Available in ammo-pack.
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD53D − 200 V
BYD53G − 400 V
BYD53J − 600 V
BYD53K − 800 V
BYD53M − 1000 V
BYD53U − 1200 V
BYD53V − 1400 V
V
R
continuous reverse voltage
BYD53D − 200 V
BYD53G − 400 V
BYD53J − 600 V
BYD53K − 800 V
BYD53M − 1000 V
BYD53U − 1200 V
BYD53V − 1400 V
I
F(AV)
I
F(AV)
I
FRM
average forward current Ttp=55°C; lead length = 10 mm
BYD53D to M − 0.75 A
BYD53U and V − 0.85 A
average forward current T
BYD53D to M − 0.40 A
BYD53U and V − 0.45 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=65°C; PCB mounting (see
amb
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYD53D to M − 6.5 A
BYD53U and V − 8.25 A
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
ak
MAM123
1998 Dec 04 2
Philips Semiconductors Product specification
Fast soft-recovery controlled
BYD53 series
avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
C
d
repetitive peak forward current T
=65°C; see Figs 8 and 9
amb
BYD53D to M − 3.6 A
BYD53U and V − 4.45 A
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
prior to
− 5A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Fig.12 −65 +175 °C
forward voltage IF= 1 A; Tj=T
BYD53D to M −−2.1 V
see Figs 13 and 14
j max
;
BYD53U and V −−1.7 V
forward voltage IF= 1 A; see Figs 13 and 14
BYD53D to M −−3.6 V
BYD53U and V −−2.3 V
reverse avalanche
IR= 0.1 mA
breakdown voltage
BYD53D 300 −−V
BYD53G 500 −−V
BYD53J 700 −−V
BYD53K 900 −−V
BYD53M 1100 −−V
BYD53U 1300 −−V
BYD53V 1500 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.15 −− 1µA
RRMmax
; Tj= 165 °C;
−−100 µA
see Fig.15
reverse recovery time when switched from IF= 0.5 A
BYD53D to J −−30 ns
BYD53K and M −−75 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.18
BYD53U and V −−150 ns
diode capacitance f = 1 MHz; VR= 0; see Fig.16 − 20 − pF
1998 Dec 04 3
Philips Semiconductors Product specification
Fast soft-recovery controlled
BYD53 series
avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the
maximum slope of reverse
recovery current
BYD53D to J −− 7A/µs
BYD53K and M −− 6A/µs
BYD53U and V −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
when switched from I
VR≥30 V and dIF/dt = −1A/µs;
see Fig.19
‘General Part of associated Handbook’
=1A to
F
.
1998 Dec 04 4
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