Philips byd47 DATASHEETS

DISCRETE SEMICONDUCTORS

b

DATA SH EET

ook, halfpage

M3D121

BYD47 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Jun 05

1999 Nov 11

Philips Semiconductors Product specification

Fast soft-recovery

BYD47 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Shipped in 8 mm embossed tape

• Smallest surface mount

rectifier outline.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RSM

non-repetitive peak reverse voltage

BYD47-16 − 1700 V
BYD47-18 − 1900 V
BYD47-20 − 2100 V

V

RRM

repetitive peak reverse voltage

BYD47-16 − 1600 V
BYD47-18 − 1800 V
BYD47-20 − 2000 V

I

F(AV)

I

F(AV)

I

FRM

I

FSM

T

stg

T

j

average forward current Ttp= 105 °C; see Fig.2;

average forward current T

repetitive peak forward current Ttp=85°C; see Fig.4 − 8.0 A

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

DESCRIPTION

Cavity free cylindrical glass SOD87
package through Implotec

(1)

technology. This package is

handbook, 4 columns

ka

Fig.1 Simplified outline (SOD87) and symbol.

averaged over any 20 ms period;
see also Fig.6

=25°C; PCB mounting (see

amb

Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

=65°C; see Fig.5 − 2.8 A

T

amb

prior to surge; VR=V

RRMmax

hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.

(1) Implotec is a trademark of Philips.

MAM061

− 0.80 A

− 0.34 A

j max

− 10 A

1999 Nov 11 2

Philips Semiconductors Product specification

Fast soft-recovery

BYD47 series

controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

I

t

C

F

R

rr

dI

-------­dt

d

R

forward voltage IF= 1 A; Tj=T

reverse current VR=V

reverse recovery time when switched from IF= 0.5 A to

diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 15 − pF
maximum slope of reverse recovery

current

THERMAL CHARACTERISTICS

I

= 1 A; see Fig.8 − 2.40 V

F

RRMmax

see Fig.9
V

R=VRRMmax

see Fig.9

IR= 1 A; measured at IR= 0.25 A;
see Fig.12

when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.13

; see Fig.8 − 2.05 V

j max

;

; Tj= 125 °C;

− 5 µA

− 50 µA

− 300 ns

= 1 A to

F

− 5A/µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

“General Part of associated Handbook”.

1999 Nov 11 3

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

GRAPHICAL DATA

1.6

handbook, halfpage

I

F(AV)

(A)

1.2

0.8

0.4

0

0 200

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

100

o

Ttp( C)

MLC194

0.4

handbook, halfpage

I

F(AV)

(A)

0.3

0.2

0.1

0

0 200

a = 1.42; VR=V
Device mounted as shown in Fig.11.
Switched mode application.

RRMmax

; δ = 0.5.

BYD47 series

100

T ( C)

amb

MLC195

o

Fig.2 Maximum permissible average forward

current asa function of tie-point temperature
(including losses due to reverse leakage).

10

handbook, full pagewidth

I

FRM

(A)

8

δ = 0.05

6

4

2

0

2

10

1

10

11010

0.1

0.2

0.5
1

Fig.3 Maximum permissible average forward

current as afunction ofambient temperature
(including losses due to reverse leakage).

MLC198

2103

t (ms)

p

10

4

Ttp=85°C; R
V

during 1 −δ; curves include derating for T

RRMmax

th j-tp

= 30 K/W.

j max

at V

RRM

= 2000 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1999 Nov 11 4