Philips byd47 DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D121
BYD47 series
Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of 1996 Jun 05
1999 Nov 11
Philips Semiconductors Product specification
Fast soft-recovery
BYD47 series
controlled avalanche rectifiers

FEATURES

Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Shipped in 8 mm embossed tape
Smallest surface mount
rectifier outline.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
non-repetitive peak reverse voltage
BYD47-16 1700 V BYD47-18 1900 V BYD47-20 2100 V
V
RRM
repetitive peak reverse voltage
BYD47-16 1600 V BYD47-18 1800 V BYD47-20 2000 V
I
F(AV)
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
average forward current Ttp= 105 °C; see Fig.2;
average forward current T
repetitive peak forward current Ttp=85°C; see Fig.4 8.0 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
storage temperature 65 +175 °C junction temperature see Fig.7 65 +175 °C

DESCRIPTION

Cavity free cylindrical glass SOD87 package through Implotec
(1)
technology. This package is
handbook, 4 columns
ka
Fig.1 Simplified outline (SOD87) and symbol.
averaged over any 20 ms period; see also Fig.6
=25°C; PCB mounting (see
amb
Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6
=65°C; see Fig.5 2.8 A
T
amb
prior to surge; VR=V
RRMmax
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
MAM061
0.80 A
0.34 A
j max
10 A
1999 Nov 11 2
Philips Semiconductors Product specification
Fast soft-recovery
BYD47 series
controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
I
t
C
F
R
rr
dI
-------­dt
d
R
forward voltage IF= 1 A; Tj=T
reverse current VR=V
reverse recovery time when switched from IF= 0.5 A to
diode capacitance f = 1 MHz; VR= 0 V; see Fig.10 15 pF maximum slope of reverse recovery
current

THERMAL CHARACTERISTICS

I
= 1 A; see Fig.8 2.40 V
F
RRMmax
see Fig.9 V
R=VRRMmax
see Fig.9
IR= 1 A; measured at IR= 0.25 A; see Fig.12
when switched from I VR≥ 30 V and dIF/dt = 1A/µs; see Fig.13
; see Fig.8 2.05 V
j max
;
; Tj= 125 °C;
5 µA
50 µA
300 ns
= 1 A to
F
5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point 30 K/W thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.11. For more information please refer to the
“General Part of associated Handbook”.
1999 Nov 11 3
Philips Semiconductors Product specification
Fast soft-recovery controlled avalanche rectifiers

GRAPHICAL DATA

1.6
handbook, halfpage
I
F(AV)
(A)
1.2
0.8
0.4
0
0 200
a =1.42; VR=V Switched mode application.
RRMmax
; δ= 0.5.
100
o
Ttp( C)
MLC194
0.4
handbook, halfpage
I
F(AV)
(A)
0.3
0.2
0.1
0
0 200
a = 1.42; VR=V Device mounted as shown in Fig.11. Switched mode application.
RRMmax
; δ = 0.5.
BYD47 series
100
T ( C)
amb
MLC195
o
Fig.2 Maximum permissible average forward
current asa function of tie-point temperature (including losses due to reverse leakage).
10
handbook, full pagewidth
I
FRM
(A)
8
δ = 0.05
6
4
2
0
2
10
1
10
11010
0.1
0.2
0.5 1
Fig.3 Maximum permissible average forward
current as afunction ofambient temperature (including losses due to reverse leakage).
MLC198
2103
t (ms)
p
10
4
Ttp=85°C; R V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 30 K/W.
j max
at V
RRM
= 2000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11 4
Loading...
+ 8 hidden pages