DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D119
BYD43 series
Fast soft-recovery rectifiers
Product specification
Supersedes data of February 1995
File under Discrete Semiconductors, SC01
1996 Jun 05
Philips Semiconductors Product specification
Fast soft-recovery rectifiers BYD43 series
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Available in ammo-pack.
handbook, 4 columns
ak
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
non-repetitive peak reverse voltage
BYD43U − 1300 V
BYD43V − 1500 V
BYD43-16 − 1700 V
BYD43-18 − 1900 V
BYD43-20 − 2100 V
V
RRM
repetitive peak reverse voltage
BYD43U − 1200 V
BYD43V − 1400 V
BYD43-16 − 1600 V
BYD43-18 − 1800 V
BYD43-20 − 2000 V
I
F(AV)
I
F(AV)
I
FRM
average forward current Ttp=55°C; lead length = 10 mm;
BYD43U and V − 1.20 A
BYD43-16 to 20 − 0.68 A
average forward current T
BYD43U and V − 0.65 A
BYD43-16 to 20 − 0.30 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=65°C; PCB mounting (see
amb
Fig.20); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYD43U and V − 11 A
BYD43-16 to 20 − 6A
I
FRM
repetitive peak forward current T
=65°C; see Figs 8 and 9
amb
BYD43U and V − 6.0 A
BYD43-16 to 20 − 3.2 A
1996 Jun 05 2
Philips Semiconductors Product specification
Fast soft-recovery rectifiers BYD43 series
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
I
R
I
R
t
rr
C
d
dI
R
-------dt
non-repetitive peak forward current t = 10 ms half sinewave; Tj=T
BYD43U and V − 6A
prior to surge; VR=V
RRMmax
j max
BYD43-16 to 20 − 6A
storage temperature −65 +175 °C
junction temperature see Figs 12 and 13 −65 +175 °C
forward voltage IF= 1 A; Tj=T
BYD43U and V −−1.20 V
see Figs 14 and 15
j max
;
BYD43-16 to 20 −−2.05 V
forward voltage IF=1A;
BYD43U and V −−1.5 V
see Figs 14 and 15
BYD43-16 to 20 −−2.4 V
reverse current VR=V
BYD43U and V −− 1µA
see Figs 16 and 17
RRMmax
;
BYD43-16 to 20 −− 5µA
reverse current VR=V
RRMmax
BYD43U and V Tj= 165 °C; see Fig 16 −−100 µA
BYD43-16 to 20 T
= 125 °C; see Fig 17 −− 50 µA
j
reverse recovery time when switched from
BYD43U and V −−250 ns
BYD43-16 to 20 −−300 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig 22
diode capacitance f = 1 MHz; VR=0V;
BYD43U and V − 20 − pF
see Figs 18 and 19
BYD43-16 to 20 − 15 − pF
maximum slope of reverse recovery
current
BYD43U and V −− 5A/µs
BYD43-16 to 20 −− 5A/µs
when switched from
= 1 A to VR≥ 30 V
I
F
and dIF/dt = −1A/µs;
see Fig.21
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 05 3
Philips Semiconductors Product specification
Fast soft-recovery rectifiers BYD43 series
GRAPHICAL DATA
1.6
handbook, halfpage
I
F(AV)
(A)
1.2
0.8
0.4
0
0 200
BYD43U andV
a =1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
100
; δ= 0.5.
Ttp( C)
MLC311
o
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
0.8
handbook, halfpage
I
F(AV)
(A)
0.6
0.4
0.2
0
0 200
BYD43-16 to20
a =1.42; VR=V
Switched mode application.
RRMmax
lead length 10 mm
100
; δ= 0.5.
o
Ttp( C)
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MLC315
amb
MLC312
o
1.0
handbook, halfpage
I
F(AV)
(A)
0.8
0.6
0.4
0.2
0
0 200
BYD43U andV
a =1.42; VR=V
Device mounted as shown in Fig.20.
Switched mode application.
RRMmax
; δ= 0.5.
100
T ( C)
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
0.5
handbook, halfpage
I
F(AV)
(A)
0.4
0.3
0.2
0.1
0
0 200
BYD43-16 to20
a =1.42; VR=V
Device mounted as shown in Fig.20.
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
amb
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLC316
1996 Jun 05 4