Philips BYD37G, BYD37D, BYD37M, BYD37K, BYD37J Datasheet

DISCRETE SEMICONDUCTORS

b

DATA SH EET

ook, halfpage

M3D121

BYD37 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of 1996 Jun 05

1999 Nov 16

Philips Semiconductors Product specification

Fast soft-recovery

BYD37 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Smallest surface mount rectifier
outline

• Shipped in 8 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V

V

R

continuous reverse voltage

BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V

I

F(AV)

I

F(AV)

I

FRM

I

FSM

average forward current Ttp= 105 °C; see Fig.2;

average forward current T

repetitive peak forward current Ttp= 105 °C; see Fig.4 − 13 A

non-repetitive peak forward current t = 10 ms half sine wave; Tj=T

DESCRIPTION

Cavity free cylindrical glass package
through Implotec

(1)

technology.

This package is hermetically sealed

handbook, 4 columns

ka

Fig.1 Simplified outline (SOD87) and symbol.

averaged over any 20 ms period;
see also Fig.6

=60°C; PCB mounting (see

amb

Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

T

=60°C; see Fig.5 − 5.5 A

amb

prior to surge; VR=V

RRMmax

and fatigue free as coefficients of
expansion of all used parts are
matched.

(1) Implotec is a trademark of Philips.

MAM061

− 1.5 A

− 0.6 A

j max

− 20 A

1999 Nov 16 2

Philips Semiconductors Product specification

Fast soft-recovery

BYD37 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

RSM

non-repetitive peak reverse
avalanche energy

BYD37D to J − 10 mJ
BYD37K and M − 7mJ

T

stg

T

j

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

V

F

(BR)R

forward voltage IF= 1 A; Tj=T

reverse avalanche breakdown
voltage

BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V

I

R

t

rr

reverse current VR=V

reverse recovery time when switched from

BYD37D to J −−250 ns
BYD37K and M −−300 ns

C

d

dI

-------­dt

R

diode capacitance f = 1 MHz; VR=0;

maximum slope of reverse recovery
current

BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs

L = 120 mH; Tj=T

j max

prior to

surge; inductive load switched off

j max

;

−−1.1 V

see Fig.8
I

=1A;

F

−−1.3 V

see Fig.8
IR= 0.1 mA

; see Fig.9 −− 1µA

RRMmax

V

R=VRRMmax

;

−−100 µA

Tj= 165 °C; see Fig.9

IF= 0.5 A to IR=1A;
measured at IR= 0.25A;
see Fig.12

− 20 − pF

see Fig.10
when switched from

=1AtoVR≥30 V and

I

F

dIF/dt = −1A/µs;
see Fig.13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

“General Part of associated Handbook”

.

1999 Nov 16 3

Philips Semiconductors Product specification

Fast soft-recovery
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

3

I

F(AV)

(A)

2

1

0

0 200

a =1.42; VR=V
Switched mode application.

RRMmax

; δ= 0.5.

100

o

T ( C)

tp

MGA854

0.8

handbook, halfpage

I

F(AV)

(A)

0.6

0.4

0.2

0

0 200

a = 1.42; VR=V
Device mounted as shown in Fig.11.
Switched mode application.

RRMmax

; δ = 0.5.

BYD37 series

100

T ( C)

amb

MGA855

o

Fig.2 Maximum permissible average forward

current asa function of tie-point temperature
(including losses due to reverse leakage).

16

handbook, full pagewidth

I

FRM

(A)

12

8

4

0

2

10

10

δ

= 0.05

0.1

0.2

0.5

1

1

11010

Fig.3 Maximum permissible average forward

current as afunction ofambient temperature
(including losses due to reverse leakage).

MLB268

2103

t (ms)

p

10

4

Ttp= 105 °C; R
V

during 1 −δ; curves include derating for T

RRMmax

th j-tp

= 30 K/W.

j max

at V

RRM

= 1000 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1999 Nov 16 4