Philips BYD37D, BYD37M, BYD37K, BYD37J, BYD37G Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

M3D121

BYD37 series

Fast soft-recovery
controlled avalanche rectifiers

Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01

1996 Jun 05

Philips Semiconductors Product specification

Fast soft-recovery

BYD37 series

controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

DESCRIPTION

Cavity free cylindrical glass package
through Implotec

(1)

technology.

This package is hermetically sealed

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

handbook, 4 columns

ka

absorption capability

• Smallest surface mount rectifier
outline

• Shipped in 8 mm embossed tape.

Fig.1 Simplified outline (SOD87) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V

V

R

continuous reverse voltage

BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V

I

F(AV)

average forward current Ttp= 105 °C; see Fig.2;

averaged over any 20 ms period;
see also Fig.6

I

F(AV)

average forward current T

=60°C; PCB mounting (see

amb

Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6

I

FRM

I

FSM

E

RSM

repetitive peak forward current Ttp= 105 °C; see Fig.4 − 13 A

=60°C; see Fig.5 − 5.5 A

T

amb

non-repetitive peak forward current t = 10 ms half sine wave;

non-repetitive peak reverse
avalanche energy

Tj=T
VR=V

L = 120 mH; Tj=T
surge; inductive load switched off

prior to surge;

j max

RRMmax

j max

BYD37D to J − 10 mJ
BYD37K and M − 7mJ

and fatigue free as coefficients of
expansion of all used parts are
matched.

(1) Implotec is a trademark of Philips.

MAM061

− 1.5 A

− 0.6 A

− 20 A

prior to

1996 Jun 05 2

Philips Semiconductors Product specification

Fast soft-recovery

BYD37 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

T

stg

T

j

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

(BR)R

I

R

t

rr

C

d

dI

R

-------­dt

storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C

forward voltage IF= 1 A; Tj=T

j max

;

−−1.1 V

see Fig.8
I

=1A;

F

−−1.3 V

see Fig.8

reverse avalanche breakdown

IR= 0.1 mA

voltage

BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V

reverse current VR=V

V

R=VRRMmax

; see Fig.9 −− 1µA

RRMmax

;

−−100 µA

Tj= 165 °C; see Fig.9

reverse recovery time when switched from

BYD37D to J −−250 ns
BYD37K and M −−300 ns

diode capacitance f = 1 MHz; VR=0V;

IF= 0.5 A to IR=1A;
measured at IR= 0.25A;
see Fig.12

− 20 − pF

see Fig.10

maximum slope of reverse recovery
current

BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs

when switched from
I

=1AtoVR≥30 V

F

and dIF/dt = −1A/µs;
see Fig.13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the

‘General Part of Handbook SC01’

.

1996 Jun 05 3