Philips BYD37D, BYD37M, BYD37K, BYD37J, BYD37G Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D121
BYD37 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Jun 05
Philips Semiconductors Product specification
Fast soft-recovery
BYD37 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
handbook, 4 columns
ka
absorption capability
• Smallest surface mount rectifier
outline
• Shipped in 8 mm embossed tape.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V
V
R
continuous reverse voltage
BYD37D − 200 V
BYD37G − 400 V
BYD37J − 600 V
BYD37K − 800 V
BYD37M − 1000 V
I
F(AV)
average forward current Ttp= 105 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.6
I
F(AV)
average forward current T
=60°C; PCB mounting (see
amb
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
I
FRM
I
FSM
E
RSM
repetitive peak forward current Ttp= 105 °C; see Fig.4 − 13 A
=60°C; see Fig.5 − 5.5 A
T
amb
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
BYD37D to J − 10 mJ
BYD37K and M − 7mJ
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MAM061
− 1.5 A
− 0.6 A
− 20 A
prior to
1996 Jun 05 2
Philips Semiconductors Product specification
Fast soft-recovery
BYD37 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
T
stg
T
j
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
forward voltage IF= 1 A; Tj=T
j max
;
−−1.1 V
see Fig.8
I
=1A;
F
−−1.3 V
see Fig.8
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD37D 300 −−V
BYD37G 500 −−V
BYD37J 700 −−V
BYD37K 900 −−V
BYD37M 1100 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.9 −− 1µA
RRMmax
;
−−100 µA
Tj= 165 °C; see Fig.9
reverse recovery time when switched from
BYD37D to J −−250 ns
BYD37K and M −−300 ns
diode capacitance f = 1 MHz; VR=0V;
IF= 0.5 A to IR=1A;
measured at IR= 0.25A;
see Fig.12
− 20 − pF
see Fig.10
maximum slope of reverse recovery
current
BYD37D to J −− 6A/µs
BYD37K and M −− 5A/µs
when switched from
I
=1AtoVR≥30 V
F
and dIF/dt = −1A/µs;
see Fig.13
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
‘General Part of Handbook SC01’
.
1996 Jun 05 3
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