Philips BYD33K, BYD33J-EB, BYD33J, BYD33V-EB, BYD33M-EB Datasheet
DATA SH EET
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
DISCRETE SEMICONDUCTORS
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
, halfpage
M3D119
1996 Sep 18 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
ak
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD33D − 200 V
BYD33G − 400 V
BYD33J − 600 V
BYD33K − 800 V
BYD33M − 1000 V
BYD33U − 1200 V
BYD33V − 1400 V
V
R
continuous reverse voltage
BYD33D − 200 V
BYD33G − 400 V
BYD33J − 600 V
BYD33K − 800 V
BYD33M − 1000 V
BYD33U − 1200 V
BYD33V − 1400 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M − 1.30 A
BYD33U and V − 1.26 A
I
F(AV)
average forward current T
amb
=65°C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD33D to M − 0.70 A
BYD33U and V − 0.67 A
I
FRM
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYD33D to M − 12 A
BYD33U and V − 11 A
1996 Sep 18 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
I
FRM
repetitive peak forward current T
amb
=65°C; see Figs 8 and 9
BYD33D to M − 7A
BYD33U and V − 6A
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 20 A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
BYD33D to J − 10 mJ
BYD33K to V − 7mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Figs 12 and 13 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max
;
see Figs 14 and 15
−−1.1 V
I
F
=1A;
see Figs 14 and 15
−−1.3 V
V
(BR)R
reverse avalanche breakdown
voltage
IR= 0.1 mA
BYD33D 300 −−V
BYD33G 500 −−V
BYD33J 700 −−V
BYD33K 900 −−V
BYD33M 1100 −−V
BYD33U 1300 −−V
BYD33V 1500 −−V
I
R
reverse current VR=V
RRMmax
;
see Fig.16
−− 1µA
V
R=VRRMmax
;
Tj= 165 °C; see Fig.16
−−100 µA
t
rr
reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A
see Fig.21
BYD33D to J −−250 ns
BYD33K and M −−300 ns
BYD33U and V −−500 ns
C
d
diode capacitance f = 1 MHz; VR=0V;
see Figs 17 and 18
− 20 − pF
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1996 Sep 18 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD33 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
“General Part of associated Handbook”
.
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to VR≥ 30 V
and dIF/dt = −1A/µs;
see Fig.20
BYD33D to J −− 6A/µs
BYD33K to V −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
R
th j-a
thermal resistance from junction to ambient note 1 120 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
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