Philips BYD33G, BYD33D, BYD33V, BYD33U, BYD33M Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D119
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
File under Discrete Semiconductors, SC01
1996 Sep 18
Philips Semiconductors Product specification
Fast soft-recovery
BYD33 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
handbook, 4 columns
• Available in ammo-pack.
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD33D − 200 V
BYD33G − 400 V
BYD33J − 600 V
BYD33K − 800 V
BYD33M − 1000 V
BYD33U − 1200 V
BYD33V − 1400 V
V
R
continuous reverse voltage
BYD33D − 200 V
BYD33G − 400 V
BYD33J − 600 V
BYD33K − 800 V
BYD33M − 1000 V
BYD33U − 1200 V
BYD33V − 1400 V
I
F(AV)
I
F(AV)
I
FRM
average forward current Ttp=55°C; lead length = 10 mm;
BYD33D to M − 1.30 A
BYD33U and V − 1.26 A
average forward current T
BYD33D to M − 0.70 A
BYD33U and V − 0.67 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=65°C; PCB mounting (see
amb
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
repetitive peak forward current Ttp=55°C; see Figs 6 and 7
BYD33D to M − 12 A
BYD33U and V − 11 A
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
ak
MAM123
1996 Sep 18 2
Philips Semiconductors Product specification
Fast soft-recovery
BYD33 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
repetitive peak forward current T
=65°C; see Figs 8 and 9
amb
BYD33D to M − 7A
BYD33U and V − 6A
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
prior to
− 20 A
BYD33D to J − 10 mJ
BYD33K to V − 7mJ
storage temperature −65 +175 °C
junction temperature see Figs 12 and 13 −65 +175 °C
forward voltage IF= 1 A; Tj=T
j max
;
−−1.1 V
see Figs 14 and 15
I
=1A;
F
−−1.3 V
see Figs 14 and 15
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD33D 300 −−V
BYD33G 500 −−V
BYD33J 700 −−V
BYD33K 900 −−V
BYD33M 1100 −−V
BYD33U 1300 −−V
BYD33V 1500 −−V
reverse current VR=V
RRMmax
;
−− 1µA
see Fig.16
V
R=VRRMmax
;
−−100 µA
Tj= 165 °C; see Fig.16
reverse recovery time when switched from
BYD33D to J −−250 ns
BYD33K and M −−300 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A
see Fig.21
BYD33U and V −−500 ns
diode capacitance f = 1 MHz; VR=0V;
− 20 − pF
see Figs 17 and 18
1996 Sep 18 3
Philips Semiconductors Product specification
Fast soft-recovery
BYD33 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
maximum slope of reverse recovery
current
BYD33D to J −− 6A/µs
BYD33K to V −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
‘General Part of Handbook SC01’
when switched from
I
= 1 A to VR≥ 30 V
F
and dIF/dt = −1A/µs;
see Fig.20
.
1996 Sep 18 4
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