Philips BYD32J, BYD32G, BYD32D Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D423
BYD32 series
Fast soft-recovery controlled avalanche rectifiers
Preliminary specification
1998 Dec 03
Philips Semiconductors Preliminary specification
Fast soft-recovery controlled
BYD32 series
avalanche rectifiers
FEATURES
Glass passivated
High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD 120 package through Implotec
(1)
technology. This package is
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
handbook, halfpage
ka
Available in ammo-pack.
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD32D 200 V BYD32G 400 V BYD32J 600 V
V
R
continuous reverse voltage
BYD32D 200 V BYD32G 400 V BYD32J 600 V
I
F(AV)
average forward current T
=25°C; printed-circuit board
amb
mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period; see Fig.2
I
FSM
T T
stg j
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=25°C; VR=V
RRMmax
storage temperature 65 +175 °C junction temperature see Fig.3 65 +175 °C
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
MGL571
0.76 A
15 A
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
forward voltage IF= 1 A; see Fig.4 1.3 V reverse current VR=V
RRMmax
V
R=VRRMmax
; Tj= 165 °C; see Fig.5 100 µA
reverse recovery time when switched from IF= 0.5 A to IR=1A;
1 µA
250 ns
measured at IR= 0.25 A; see Fig.7
1998 Dec 03 2
Philips Semiconductors Preliminary specification
Fast soft-recovery controlled
BYD32 series
avalanche rectifiers
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer 40 µm, pitch 5 mm; see Fig.6.
thermal resistance from junction to ambient note 1 150 K/W
1998 Dec 03 3
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