Philips byd31 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
M3D122
BYD31 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
Philips Semiconductors Product specification
Fast soft-recovery
BYD31 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
• Available in ammo-pack.
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD31D − 200 V
BYD31G − 400 V
BYD31J − 600 V
BYD31K − 800 V
BYD31M − 1000 V
V
R
continuous reverse voltage
BYD31D − 200 V
BYD31G − 400 V
BYD31J − 600 V
BYD31K − 800 V
BYD31M − 1000 V
I
F(AV)
average forward current Ttp=55°C; lead length = 10 mm;
see Fig.2; averaged over any
20 ms period;
see also Fig.6
T
=60°C; PCB mounting (see
amb
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
I
FRM
I
FSM
repetitive peak forward current Ttp=55°C; see Fig.4 − 4A
T
=60°C; see Fig.5 − 3A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
VR=V
prior to surge;
j max
RRMmax
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
a
MAM196
− 440 mA
− 320 mA
− 5A
1996 Sep 18 2 Not recommended for new designs
Philips Semiconductors Product specification
Fast soft-recovery
BYD31 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
non-repetitive peak reverse power
dissipation
t=20µs half sine wave; Tj=T
prior to surge
j max
BYD31D to J − 100 W
BYD31K and M − 50 W
storage temperature −65 +175 °C
junction temperature see Fig.7 −65 +175 °C
forward voltage IF= 0.5 A; Tj=T
j max
;
−−1.15 V
see Fig.8
I
= 0.5 A;
F
−−1.35 V
see Fig.8
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYD31D 300 −−V
BYD31G 500 −−V
BYD31J 700 −−V
BYD31K 900 −−V
BYD31M 1100 −−V
reverse current VR=V
RRMmax
;
−− 1µA
see Fig.9
V
R=VRRMmax
;
−−75 µA
Tj= 165 °C; see Fig.9
reverse recovery time when switched from
BYD31D to J −−250 ns
BYD31K and M −−300 ns
diode capacitance f = 1 MHz; VR=0V;
IF= 0.5 A to IR=1A;
measured at IR= 0.25A
see Fig.12
− 9 − pF
see Fig.10
maximum slope of reverse recovery
current
BYD31D to J −− 6A/µs
BYD31K and M −− 5A/µs
when switched from
I
= 1 A to VR≥ 30 V
F
and dIF/dt = −1A/µs;
see Fig.13
1996 Sep 18 3 Not recommended for new designs
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