Philips BYD17M, BYD17K, BYD17J-DE, BYD17J, BYD17G Datasheet
...
DATA SH EET
Product specification
Supersedes data of 1996 Sep 26
1999 Nov 11
DISCRETE SEMICONDUCTORS
BYD17 series
General purpose
controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 11 2
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER MARKING CODE
BYD17D 17D PH
BYD17G 17G PH
BYD17J 17J PH
BYD17K 17K PH
BYD17M 17M PH
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD17D − 200 V
BYD17G − 400 V
BYD17J − 600 V
BYD17K − 800 V
BYD17M − 1000 V
V
RWM
crest working reverse voltage
BYD17D − 200 V
BYD17G − 400 V
BYD17J − 600 V
BYD17K − 800 V
BYD17M − 1000 V
V
R
continuous reverse voltage
BYD17D − 200 V
BYD17G − 400 V
BYD17J − 600 V
BYD17K − 800 V
BYD17M − 1000 V
1999 Nov 11 3
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
I
F(AV)
average forward current Ttp= 105 °C;
averaged over any 20 ms period;
see Figs 2 and 4
− 1.5 A
T
amb
=65°C; PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
− 0.6 A
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max
prior to surge;
VR=V
RRMmax
− 20 A
E
RSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 7mJ
T
stg
storage temperature −65 +175 °C
T
j
junction temperature see Fig.5 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage IF= 1 A; Tj=T
j max;
see Fig.6 −−0.93 V
I
F
= 1 A; see Fig.6 −−1.05 V
V
(BR)R
reverse avalanche
breakdown voltage
IR= 0.1 mA
BYD17D 225 −−V
BYD17G 450 −−V
BYD17J 650 −−V
BYD17K 900 −−V
BYD17M 1100 −−V
I
R
reverse current VR=V
RRMmax
; see Fig.7 −−1µA
V
R=VRRMmax
; Tj= 165 °C; see Fig.7 −−100 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.10
− 3 −µs
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 21 − pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Loading...