Philips BYD17M, BYD17K, BYD17G, BYD17D Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D121
BYD17 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 26
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD17 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Shipped in 8 mm embossed tape
• Smallest surface mount rectifier
outline.
handbook, 4 columns
Fig.1 Simplified outline (SOD87) and symbol.
ka
MAM061
DESCRIPTION
Cavity free cylindrical glass package
(1)
through Implotec
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER MARKING CODE
BYD17D 17D PH
BYD17G 17G PH
BYD17J 17J PH
BYD17K 17K PH
BYD17M 17M PH
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD17D − 200 V
BYD17G − 400 V
BYD17J − 600 V
BYD17K − 800 V
BYD17M − 1000 V
V
RWM
crest working reverse voltage
BYD17D − 200 V
BYD17G − 400 V
BYD17J − 600 V
BYD17K − 800 V
BYD17M − 1000 V
V
R
continuous reverse voltage
BYD17D − 200 V
BYD17G − 400 V
BYD17J − 600 V
BYD17K − 800 V
BYD17M − 1000 V
1996 Sep 26 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BYD17 series
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F(AV)
I
FSM
E
RSM
T
stg
T
j
average forward current Ttp= 105 °C;
averaged over any 20 ms period;
see Figs 2 and 4
T
=65°C; PCB mounting (see
amb
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
non-repetitive peak forward current t = 10 ms half sinewave;
non-repetitive peak reverse avalanche
energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
prior to
storage temperature −65 +175 °C
junction temperature
see Fig.5
− 1.5 A
− 0.6 A
− 20 A
− 7
mJ
−65 +175 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
F
(BR)R
forward voltage IF= 1 A; Tj=T
= 1 A; see Fig.6 −−1.05 V
I
F
reverse avalanche
IR= 0.1 mA
see Fig.6 −−0.93 V
j max;
breakdown voltage
BYD17D 225 −−V
BYD17G 450 −−V
BYD17J 650 −−V
BYD17K 900 −−V
BYD17M 1100 −−V
I
R
t
rr
reverse current VR=V
V
R=VRRMmax
reverse recovery time when switched from IF= 0.5 A to IR=1A;
; see Fig.7 −−1µA
RRMmax
; Tj= 165 °C; see Fig.7 −−100 µA
− 3 −
µs
measured at IR= 0.25 A; see Fig.10
C
d
diode capacitance VR= 0 V; f = 1 MHz; see Fig.8 − 21 −
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 Sep 26 3
Loading...