Philips BYD167 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D121
BYD167
Ultra fast low-loss rectifiers
Preliminary specification
1998 Dec 04
Philips Semiconductors Preliminary specification
Ultra fast low-loss rectifiers BYD167
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. The SOD87 package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Available in ammo-pack
handbook, 4 columns
ka
• Smallest surface mount rectifier
package.
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage 600 V
continuous reverse voltage 600 V
average forward current Ttp= 135 °C;
1A
averaged over any 20 ms period;
see Figs 5 and 6
T
=70°C;
tp
2A
averaged over any 20 ms period;
see Figs 5 and 6
I
FSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sinewave;
VR=V
RRMmax
25 A
storage temperature −65 +175 °C
junction temperature −65 +175 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
forward voltage IF= 1 A; Tj= 150 °C; see Fig.2 1.05 V
I
= 1 A; see Fig.2 1.25 V
F
reverse current VR=V
V
R=VRRMmax
reverse recovery time when switched from IF= 0.5 A to IR=1A;
; see Fig.3 5 µA
RRMmax
; Tj= 150 °C; see Fig.3 150 µA
50 ns
measured at IR= 0.25 A
1998 Dec 04 2
Philips Semiconductors Preliminary specification
Ultra fast low-loss rectifiers BYD167
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
“General Part of associated Handbook”
.
1998 Dec 04 3
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