Philips BYD163 Datasheet
DATA SH EET
Preliminary specification
1998 Dec 04
DISCRETE SEMICONDUCTORS
BYD163
Ultra fast low-loss rectifier
k, halfpage
M3D119
1998 Dec 04 2
Philips Semiconductors Preliminary specification
Ultra fast low-loss rectifier BYD163
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. The SOD81 package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
ak
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage 600 V
V
R
continuous reverse voltage 600 V
I
F(AV)
average forward current Ttp=95°C; lead length = 10 mm;
see Fig.5;
averaged over any 20 ms period;
see also Fig.6
1A
I
FSM
non-repetitive peak forward current t = 10 ms half sinewave;
VR=V
RRMmax
25 A
T
stg
storage temperature −65 +175 °C
T
j
junction temperature −65 +175 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 1 A; Tj= 150 °C; see Fig.2 1.05 V
I
F
= 1 A; see Fig.2 1.25 V
I
R
reverse current VR=V
RRMmax
; see Fig.3 5 µA
V
R=VRRMmax
; Tj= 150 °C; see Fig.3 150 µA
t
rr
reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A
50 ns
1998 Dec 04 3
Philips Semiconductors Preliminary specification
Ultra fast low-loss rectifier BYD163
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
R
th j-a
thermal resistance from junction to ambient note 1 120 K/W
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