Philips BYD12D, BYD12J Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D423
BYD12 series
Controlled avalanche rectifiers
Preliminary specification
1998 Dec 03
Philips Semiconductors Preliminary specification
Controlled avalanche rectifiers BYD12 series
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
handbook, halfpage
ka
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYD12D − 200 V
BYD12G − 400 V
BYD12J − 600 V
BYD12K − 800 V
BYD12M − 1000 V
V
R
continuous reverse voltage
BYD12D − 200 V
BYD12G − 400 V
BYD12J − 600 V
BYD12K − 800 V
BYD12M − 1000 V
I
F(AV)
average forward current T
=25°C; printed-circuit board
amb
− 0.82 A
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period,
see Fig.2
I
FSM
T
T
stg
j
non-repetitive peak forward current
t = 10 ms half sinewave;
T
=25°C prior to surge;
j
VR=V
RRMmax
− 15 A
storage temperature −65 +175 °C
junction temperature
see Fig.3
−65 +175 °C
1998 Dec 03 2
Philips Semiconductors Preliminary specification
Controlled avalanche rectifiers BYD12 series
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of copper layer≥40µm,
pitch 5 mm; see Fig.6.
forward voltage IF= 1 A; see Fig.4 1.05 V
reverse current VR=V
V
R=VRRMmax
RRMmax
; Tj= 165 °C; see Fig.5 100 µA
1 µA
thermal resistance from junction to ambient note 1 150 K/W
1998 Dec 03 3
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