Philips BYD127 Datasheet
DISCRETE SEMICONDUCTORS
b
DATA SH EET
ook, halfpage
M3D121
BYD127
Ultra fast low-loss rectifier
Product specification
Supersedes data of 1999 Feb 10
1999 Nov 15
Philips Semiconductors Product specification
Ultra fast low-loss rectifier BYD127
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Available in ammo-pack
handbook, 4 columns
ka
• Smallest surface mount rectifier
outline.
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 200 V
continuous reverse voltage − 200 V
average forward current Ttp= 145 °C;
− 1A
averaged over any 20 ms period;
see Figs 5 and 6
T
=95°C;
tp
− 2A
averaged over any 20 ms period;
see Figs 5 and 6
I
FSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sinewave;
VR=V
RRMmax
storage temperature −65 +175 °C
junction temperature −65 +175 °C
− 25 A
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
t
rr
forward voltage IF= 1 A; see Fig.2; Tj= 150 °C; 0.8 V
= 1 A; see Fig.2 0.93 V
I
F
reverse current VR=V
V
R=VRRMmax
reverse recovery time when switched from IF= 0.5 A to IR=1A;
; see Fig.3 2 µA
RRMmax
; Tj= 150 °C; see Fig.3 50 µA
25 ns
measured at IR= 0.25 A
1999 Nov 15 2
Philips Semiconductors Product specification
Ultra fast low-loss rectifier BYD127
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
“General part of the associated handbook”
.
1999 Nov 15 3
Loading...