Philips BYD1100 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D121
BYD1100
Fast soft-recovery rectifier
Product specification
1998 Dec 03
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYD1100
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Smallest surface mount rectifier
outline
handbook, 4 columns
ka
• Shipped in 8 mm embossed tape.
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp=55°C; averaged over any
− 2.7 A
20 ms period; see Figs.2 and 4
T
=110°C; averaged over any
tp
− 1.7 A
20 ms period; see Figs.2 and 4
T
=60°C; printed-circuit board
amb
− 0.85 A
mounting, see Fig.12;
averaged over any 20 ms period;
see Figs.3 and 4
I
FRM
I
FSM
T
stg
T
j
repetitive peak forward current Ttp= 105 °C; see Fig.6 − 16 A
T
=60°C; see Fig.7 − 8A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
VR=V
prior to surge;
j max
RRMmax
− 15 A
storage temperature −65 +175 °C
junction temperature −65 +175 °C
1998 Dec 03 2
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYD1100
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
forward voltage IF= 1 A; Tj=T
I
= 1 A; see Fig.5 −−0.96 V
F
reverse avalanche
IR= 0.1 mA 120 −−V
; see Fig.5 −−0.735 V
j max
breakdown voltage
reverse current VR=V
V
R=VRRMmax
; see Fig.8 −− 5µA
RRMmax
; Tj= 165 °C;
−−150 µA
see Fig.8
reverse recovery time when switched from IF= 0.5 A
−− 10 ns
to IR= 1 A; measured at
IR= 0.25 A; see Fig.10
diode capacitance f = 1 MHz; VR= 0; see Fig.9 − 70 − pF
maximum slope of reverse
recovery current
when switched from
I
= 1 A to VR≥ 30 V and
F
−− 2A/µs
dIF/dt = −1A/µs; see Fig.11
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 30 K/W
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the
‘General Part of associated Handbook’
.
1998 Dec 03 3
Philips Semiconductors Product specification
Fast soft-recovery rectifier BYD1100
GRAPHICAL DATA
handbook, halfpage
4
I
F(AV)
(A)
3
2
1
0
0 200
Switched mode application.
a =1.42; δ = 0.5; VR=V
40 80 120 160
RRMmax
.
MGR567
Ttp (°C)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
T
MGR566
amb
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
Switched mode application.
a = 1.42; δ = 0.5; VR=V
Device mounted as shown in Fig.12.
40 80 120 160
RRMmax
.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
(°C)
I
F(AV)
MBK899
1.57
1.42
2.0
handbook, halfpage
P
(W)
1.6
1.2
0.8
0.4
0
0 2.0
a=I
F(RMS)/IF(AV)
a = 3 2.5 2
0.4 0.8 1.2 1.6
; δ = 0.5; VR=V
RRMmax
.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
(A)
3
MGR563
VF (V)
20
handbook, halfpage
I
F
(A)
16
12
8
4
0
012 4
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.5 Maximum forward voltage as a function of
forward current.
1998 Dec 03 4
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